Current Status in Layered Ternary Carbide Ti(3)SiC(2), a Review | |
H. B. Zhang; Y. W. Bao; Y. C. Zhou | |
2009 | |
发表期刊 | Journal of Materials Science & Technology
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ISSN | 1005-0302 |
卷号 | 25期号:1页码:1-38 |
摘要 | This article provides a review of current research activities that concentrate on Ti(3)SiC(2). We begin with an overview of the crystal and electronic structures, which are the basis to understand this material. Followings are the synthetic strategies that have been exploited to achieve, and the formation mechanism of Ti(3)SiC(2). Then we devote much attentions to the mechanical properties and oxidation/hot corrosion behaviors of Ti(3)SiC(2) as well as some advances achieved recently. At the end of this paper, we elaborate on some new discoveries in the Ti(3)SiC(2) system, and also give a brief discussion focused on the "microstructure-property" relationship. |
部门归属 | [zhang, h. b.; bao, y. w.; zhou, y. c.] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china.;zhou, yc (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china;yczhou@imr.ac.cn |
关键词 | Layered Ternary Ceramics Ti(3)Sic(2) Mechanical Properties Oxidation Titanium-silicon Carbide Thermal-shock Behavior Temperature Oxidation Behavior Si-c System Transmission Electron-microscopy Chemical-vapor-deposition Ti3si0.9al0.1c2 Solid-solution Liquid Reaction Synthesis Fatigue-crack Growth High-purity Ti3sic2 |
URL | 查看原文 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/32537 |
专题 | 中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | H. B. Zhang,Y. W. Bao,Y. C. Zhou. Current Status in Layered Ternary Carbide Ti(3)SiC(2), a Review[J]. Journal of Materials Science & Technology,2009,25(1):1-38. |
APA | H. B. Zhang,Y. W. Bao,&Y. C. Zhou.(2009).Current Status in Layered Ternary Carbide Ti(3)SiC(2), a Review.Journal of Materials Science & Technology,25(1),1-38. |
MLA | H. B. Zhang,et al."Current Status in Layered Ternary Carbide Ti(3)SiC(2), a Review".Journal of Materials Science & Technology 25.1(2009):1-38. |
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