Fused thiophene-split oligothiophenes with high ionization potentials for OTFTs

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	Fused thiophene-split oligothiophenes with high ionization potentials for OTFTs
	Y. Y. Zhang; M. Ichikawa; J. Hattori; T. Kato; A. Sazaki; S. Kanazawa; S. Kato; C. H. Zhang; Y. Taniguchi
	2009
发表期刊	Synthetic Metals
ISSN	0379-6779
卷号	159 期号:17-18 页码:1890-1895
摘要	Fused thiophene-split oligothiophenes were synthesized by Suzuki coupling. The relationship between the structure of these fused thiophene-split oligothiophenes and DH-6T (alpha.omega-dihexylsexithiophene) and their performance in OTFTs was discussed. The realignment of HTTfTTTH (2,5-bis-(5'-hexyl-[2,2']bithiophenyl-5-yi)-thieno[3,2-b] thiophene) molecule on the substrate after annealing was revealed by X-ray diffraction and atomic force microscopy. A similar but novel compound, TTfTTT (2,5-bis[2,2']bithiophenyl-5-yl-thieno[3.2-blthiophene), was also prepared and evaluated as an organic transistor material. Air stabilities of these three compounds in OTFT devices were affected mainly by chemical properties, but also by the ionization potentials (I(p)) of these materials. Among the three compounds, HTTfTTTH had a higher I(p) because the thiophene sequence was split by fused thiophene and the best air stability, due to the end-capping of its active a-positions by hexyl substitution. (C) 2009 Elsevier B.V. All rights reserved.
部门归属	[zhang, yanying; ichikawa, musubu; hattori, jinya; kato, tatsuya; sazaki, ayumi; kanazawa, shusuke; kato, shimpei; zhang, chunhan; taniguchi, yoshio] shinshu univ, fac text sci & technol, funct polymer sci course, ueda, nagano 3868567, japan. [zhang, yanying] chinese acad sci, inst met res, state key lab corros & protect, shenyang 110016, peoples r china.;ichikawa, m (reprint author), shinshu univ, fac text sci & technol, funct polymer sci course, 3-15-1 tokita, ueda, nagano 3868567, japan;zhangyy@imr.ac.cn musubu@shinshu-u.ac.jp
关键词	Otft Fused Thiophene Oligothiophene Ionization Potential Air Stability Thin-film Transistors Field-effect Transistors High-mobility Organic Semiconductors Carrier Mobility Copolymers Oligomers Performance Polymers
URL	查看原文
WOS记录号	WOS:000270641600036
引用统计	被引频次：8[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/32588
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	Y. Y. Zhang,M. Ichikawa,J. Hattori,et al. Fused thiophene-split oligothiophenes with high ionization potentials for OTFTs[J]. Synthetic Metals,2009,159(17-18):1890-1895.
APA	Y. Y. Zhang.,M. Ichikawa.,J. Hattori.,T. Kato.,A. Sazaki.,...&Y. Taniguchi.(2009).Fused thiophene-split oligothiophenes with high ionization potentials for OTFTs.Synthetic Metals,159(17-18),1890-1895.
MLA	Y. Y. Zhang,et al."Fused thiophene-split oligothiophenes with high ionization potentials for OTFTs".Synthetic Metals 159.17-18(2009):1890-1895.