Effect of Ar on Polycrystalline Si Films Deposited by ECR-PECVD using SiH4

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	Effect of Ar on Polycrystalline Si Films Deposited by ECR-PECVD using SiH4
	H. Cheng; A. M. Wu; N. L. Shi; L. S. Wen
	2008
发表期刊	Journal of Materials Science & Technology
ISSN	1005-0302
卷号	24 期号:5 页码:690-692
摘要	In this paper, polycrystalline silicon films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) using SiH4/Ar and SiH4/H-2 gaseous mixture. Effects of argon flow rate on the deposition efficiency and the film property were investigated by comparing with H-2. The results indicated that the deposition rate of using Ar as discharge gas was 1.5-2 times higher than that of using H-2, while the preferred orientations and the grain sizes of the films were analogous. Film crystallinity increased with the increase of Ar flow rate. Optimized flow ratio of SiH4 to Ar was obtained as F(SiH4): F(Ar)=10:70 for the highest deposition rate.
部门归属	[cheng, hua; shi, nanlin; wen, lishi] chinese acad sci, inst met res, shenyang 110016, peoples r china. [wu, aimin] dalian univ technol, dalian 116024, peoples r china. [cheng, hua] armor tech inst pla, changchun 130117, peoples r china.;wen, ls (reprint author), chinese acad sci, inst met res, shenyang 110016, peoples r china;aimin@dlut.edu.cn wen_lishi@163.com
关键词	Ar Flow Rate Ecr-pecvd Poly-si Thin Films Chemical-vapor-deposition Microcrystalline Silicon Low-temperatures Plasma Growth Transition Hydrogen
URL	查看原文
WOS记录号	WOS:000260048500002
引用统计	被引频次：3[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/32685
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	H. Cheng,A. M. Wu,N. L. Shi,et al. Effect of Ar on Polycrystalline Si Films Deposited by ECR-PECVD using SiH4[J]. Journal of Materials Science & Technology,2008,24(5):690-692.
APA	H. Cheng,A. M. Wu,N. L. Shi,&L. S. Wen.(2008).Effect of Ar on Polycrystalline Si Films Deposited by ECR-PECVD using SiH4.Journal of Materials Science & Technology,24(5),690-692.
MLA	H. Cheng,et al."Effect of Ar on Polycrystalline Si Films Deposited by ECR-PECVD using SiH4".Journal of Materials Science & Technology 24.5(2008):690-692.