Improving the high-temperature oxidation resistance of Zr2Al3C4 by silicon pack cementation

IMR OpenIR

	Improving the high-temperature oxidation resistance of Zr2Al3C4 by silicon pack cementation
	L. F. He; Y. W. Bao; M. S. Li; J. Y. Wang; Y. C. Zhou
	2008
发表期刊	Journal of Materials Research
ISSN	0884-2914
卷号	23 期号:8 页码:2275-2282
摘要	Silicon pack cementation has been applied to improve the oxidation resistance of Zr2Al3C4. The Si pack coating is mainly composed of an inner layer of ZrSi2 and SiC and an outer layer of Al2O3 at 1200 degrees C. The growth kinetics of silicide coating at 1000-1200 degrees C obey a parabolic law with an activation energy of 110.3 +/- 16.7 kJ/mol, which is controlled by inward diffusion of Si and outward diffusion of Al. Compared with Zr2Al3C4, the oxidation resistance of siliconized Zr2Al3C4 is greatly improved due to the formation of protective oxidation products, aluminosilicate glass, mullite, and ZrSiO4.
部门归属	[he, l. f.; bao, y. w.; li, m. s.; wang, j. y.; zhou, y. c.] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china. [he, l. f.] chinese acad sci, grad sch, beijing 100039, peoples r china.;zhou, yc (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china;yczhou@imr.ac.cn
关键词	Bulk Zr2al3c4 Behavior Composites Protection Mullite
URL	查看原文
WOS记录号	WOS:000258240900030
引用统计	被引频次：13[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/32801
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	L. F. He,Y. W. Bao,M. S. Li,et al. Improving the high-temperature oxidation resistance of Zr2Al3C4 by silicon pack cementation[J]. Journal of Materials Research,2008,23(8):2275-2282.
APA	L. F. He,Y. W. Bao,M. S. Li,J. Y. Wang,&Y. C. Zhou.(2008).Improving the high-temperature oxidation resistance of Zr2Al3C4 by silicon pack cementation.Journal of Materials Research,23(8),2275-2282.
MLA	L. F. He,et al."Improving the high-temperature oxidation resistance of Zr2Al3C4 by silicon pack cementation".Journal of Materials Research 23.8(2008):2275-2282.