Crystal structure of V(4)AlC(3): A new layered ternary carbide | |
C. F. Hu; J. Zhang; J. M. Wang; F. Z. Li; J. Y. Wang; Y. C. Zhou | |
2008 | |
发表期刊 | Journal of the American Ceramic Society
![]() |
ISSN | 0002-7820 |
卷号 | 91期号:2页码:636-639 |
摘要 | V(4)AlC(3), a new MAX phase, was synthesized by reactive hot pressing of a V, Al, and C powder mixture at 1700 degrees C. Using a combination of Rietveld refinement with X-ray diffraction data and ab initio calculations, the crystal structure was determinated. It was found that V(4)AlC(3) has a Ti(4)AlN(3)-type crystal structure. The lattice constants are a=0.29310 nm and c=2.27192 nm. And the atomic positions are V1 at (4f) (1/3, 2/3, 0.0544), V2 at (4e) (0, 0, 0.1548), Al at (2c) (1/3, 2/3, 1/4), C1 at (2a) (0, 0, 0), and C2 at (4f) (2/3, 1/3, 0.1080). |
部门归属 | [hu, chunfeng; zhang, jie; wang, jiemin; li, fangzhi; wang, jingyang] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china. [hu, chunfeng; zhang, jie; wang, jiemin; li, fangzhi] chinese acad sci, grad sch, beijing 100039, peoples r china.;zhou, y (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china;yczhou@imr.ac.cn |
关键词 | Phase Thin-films Ti3sic2 Ta4alc3 Polymorphism Deformation Ti4aln3 Growth |
URL | 查看原文 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/32816 |
专题 | 中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | C. F. Hu,J. Zhang,J. M. Wang,et al. Crystal structure of V(4)AlC(3): A new layered ternary carbide[J]. Journal of the American Ceramic Society,2008,91(2):636-639. |
APA | C. F. Hu,J. Zhang,J. M. Wang,F. Z. Li,J. Y. Wang,&Y. C. Zhou.(2008).Crystal structure of V(4)AlC(3): A new layered ternary carbide.Journal of the American Ceramic Society,91(2),636-639. |
MLA | C. F. Hu,et al."Crystal structure of V(4)AlC(3): A new layered ternary carbide".Journal of the American Ceramic Society 91.2(2008):636-639. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
170.pdf(536KB) | 开放获取 | -- |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论