In situ electrical measurements of polytypic silver nanowires

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	In situ electrical measurements of polytypic silver nanowires
	X. H. Liu; J. Zhu; C. H. Jin; L. M. Peng; D. M. Tang; H. M. Cheng
	2008
发表期刊	Nanotechnology
ISSN	0957-4484
卷号	19 期号:8
摘要	Novel 4H structure silver nanowires (4H-AgNWs) have been reported to coexist with the usual face-centered cubic (FCC) ones. Here we report the electrical properties of these polytypic AgNWs for the first time. AgNWs with either 4H or FCC structures in the diameter range of 20-80 nm were measured in situ inside a transmission electron microscope (TEM). Both kinds of AgNW in the diameter range show metallic conductance. The average resistivity of the 4H-AgNWs is 19.9 mu Omega cm, comparable to the 11.9 mu Omega cm of the FCC-AgNWs. The failure current density can be up to similar to 10(8) A cm(-2) for both 4H- and FCC-AgNWs. The maximum stable current density (MSCD) is introduced to estimate the AgNWs' current-carrying ability, which shows diameter-dependence with a peak around 34 nm in diameter. It is attributed to fast annihilation of the current-induced vacancies and the enhanced surface scattering. Our investigations also suggest that the magnetic field of the electromagnetic lens may also introduce some influence on the measurements inside the TEM.
部门归属	[liu, xiaohua; zhu, jing] tsing hua univ, beijing natl ctr electron microscopy, beijing 100084, peoples r china. [liu, xiaohua; zhu, jing] tsing hua univ, dept mat sci & engn, adv mat lab, beijing 100084, peoples r china. [jin, chuanhong; peng, lian-mao] peking univ, dept elect, beijing 100871, peoples r china. [jin, chuanhong; peng, lian-mao] peking univ, key lab phys & chem nanodevices, beijing 100871, peoples r china. [tang, daiming; cheng, huiming] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china.;zhu, j (reprint author), tsing hua univ, beijing natl ctr electron microscopy, beijing 100084, peoples r china;jzhu@mail.tsinghua.edu.cn
关键词	Thin Metallic-films Electromigration Semiconductor Conductivity Stress Growth
URL	查看原文
WOS记录号	WOS:000252967400025
引用统计	被引频次：33[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/32979
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	X. H. Liu,J. Zhu,C. H. Jin,et al. In situ electrical measurements of polytypic silver nanowires[J]. Nanotechnology,2008,19(8).
APA	X. H. Liu,J. Zhu,C. H. Jin,L. M. Peng,D. M. Tang,&H. M. Cheng.(2008).In situ electrical measurements of polytypic silver nanowires.Nanotechnology,19(8).
MLA	X. H. Liu,et al."In situ electrical measurements of polytypic silver nanowires".Nanotechnology 19.8(2008).