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Directional growth of Cu3Sn at the reactive interface between eutectic SnBi solder and (100) single crystal Cu
P. J. Shang; Z. Q. Liu; D. X. Li; J. K. Shang
2008
发表期刊Scripta Materialia
ISSN1359-6462
卷号59期号:3页码:317-320
摘要The growth mechanisms Of Cu(3)Sn at the interface between eutectic SnBi solder and Cu were investigated by transmission electron microscopy. On (100) Cu the interfacial reaction-during reflow resulted in a columnar growth Of Cu(3)Sn along Cu [100] with a special crystallographic relationship of (210)(Cu3Sn)parallel to(402)(Cu)parallel to and [122](Cu3Sn)parallel to[010](Cu). In the subsequent solid-state aging new triangular COri grains nucleated and grew at the triple junction sites of the interface between Cu and two adjacent COri grains. (c) 2008 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
部门归属[shang, p. j.; liu, z. q.; li, d. x.; shang, j. k.] chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china. [shang, j. k.] univ illinois, dept mat sci & engn, urbana, il 61801 usa.;liu, zq (reprint author), chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china;zqliu@imr.ac.cn
关键词Cu(3)Sn Growth Interface Soldering Transmission Electron Microscopy (Tem) Lead-free Solders Diffusion Couples Snpb Bi Temperature Systems Joints Copper Phase
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WOS记录号WOS:000257651800015
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被引频次:34[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/33065
专题中国科学院金属研究所
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P. J. Shang,Z. Q. Liu,D. X. Li,et al. Directional growth of Cu3Sn at the reactive interface between eutectic SnBi solder and (100) single crystal Cu[J]. Scripta Materialia,2008,59(3):317-320.
APA P. J. Shang,Z. Q. Liu,D. X. Li,&J. K. Shang.(2008).Directional growth of Cu3Sn at the reactive interface between eutectic SnBi solder and (100) single crystal Cu.Scripta Materialia,59(3),317-320.
MLA P. J. Shang,et al."Directional growth of Cu3Sn at the reactive interface between eutectic SnBi solder and (100) single crystal Cu".Scripta Materialia 59.3(2008):317-320.
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