Amplification of magnetoresistance of magnetite in an Fe(3)O(4)-SiO(2)-Si structure

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	Amplification of magnetoresistance of magnetite in an Fe(3)O(4)-SiO(2)-Si structure
	X. J. Wang; Y. Sui; J. K. Tang; C. Wang; X. Q. Zhang; Z. Lu; Z. G. Liu; W. H. Su; X. K. Wei; R. C. Yu
	2008
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	92 期号:1
摘要	Film of Fe(3)O(4) was prepared with laser molecular beam epitaxy deposition on a Si substrate with a native SiO(2) layer. When the temperature is increased above 250 K, the resistance drops rapidly because the conduction path starts to switch from the Fe(3)O(4) film to the inversion layer underneath the SiO(2) via thermally assisted tunneling. A greatly magnified low field negative magnetoresistance of Fe(3)O(4) is observed at 280 K. The effect is similar to a metal-oxide-semiconductor field-effect transistor. The magnetoresistance becomes positive with further increase in the magnetic field due to the Lorentz force and other effects on the carriers in the inversion layer. (C) 2008 American Institute of Physics.
部门归属	[wang, xianjie; sui, yu; tang, jinke; wang, cong; zhang, xingquan; lu, zhe; liu, zhiguo; su, wenhui] harbin inst technol, dept phys, ccmst, harbin 150001, peoples r china. [sui, yu] acad sinica, int ctr mat phys, shenyang 110015, peoples r china. [tang, jinke] univ wyoming, dept phys & astron, laramie, wy 82071 usa. [wei, xiankui; yu, richeng] chinese acad sci, inst phys, beijing natl lab condensed matter phys, beijing 100080, peoples r china.;wang, xj (reprint author), harbin inst technol, dept phys, ccmst, harbin 150001, peoples r china;suiyu@hit.edu.cn
关键词	Insulator-transition Fe3o4 Films Thin-films Magnetotransport Transport Silicon Si
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WOS记录号	WOS:000252284200090
引用统计	被引频次：18[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/33155
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	X. J. Wang,Y. Sui,J. K. Tang,et al. Amplification of magnetoresistance of magnetite in an Fe(3)O(4)-SiO(2)-Si structure[J]. Applied Physics Letters,2008,92(1).
APA	X. J. Wang.,Y. Sui.,J. K. Tang.,C. Wang.,X. Q. Zhang.,...&R. C. Yu.(2008).Amplification of magnetoresistance of magnetite in an Fe(3)O(4)-SiO(2)-Si structure.Applied Physics Letters,92(1).
MLA	X. J. Wang,et al."Amplification of magnetoresistance of magnetite in an Fe(3)O(4)-SiO(2)-Si structure".Applied Physics Letters 92.1(2008).