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Electric Current-induced Failure of 200-nm-thick Gold Interconnects
B. Zhang; Q. Y. Yu; J. Tan; G. P. Zhang
2008
发表期刊Journal of Materials Science & Technology
ISSN1005-0302
卷号24期号:6页码:895-898
摘要200-nm-thick Au interconnects on a quartz substrate were tested in-situ inside a dual-beam microscope by applying direct current, alternating current and alternating current with a small direct current component. The failure behavior of the Au interconnects under three kinds of electric currents were characterized in-situ by scanning electron microscopy. It is found that the formation of voids and subsequent growth perpendicular to the interconnect direction is the fatal failure mode for all the Au interconnects under three kinds of electric currents. The failure mechanism of the ultrathin metal lines induced by the electric currents was analyzed.
部门归属[zhang, bin; tan, jun; zhang, guangping] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china. [zhang, bin; yu, qingyuan] northeastern univ, sch met & mat, shenyang 110004, peoples r china.;zhang, gp (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china;gpzhang@imr.ac.cn
关键词Au Interconnect Electric Current Thermal Fatigue Failure Thin Copper-films Bamboo Al Electromigration Mechanisms Damage
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WOS记录号WOS:000261773700014
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被引频次:4[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/33307
专题中国科学院金属研究所
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B. Zhang,Q. Y. Yu,J. Tan,et al. Electric Current-induced Failure of 200-nm-thick Gold Interconnects[J]. Journal of Materials Science & Technology,2008,24(6):895-898.
APA B. Zhang,Q. Y. Yu,J. Tan,&G. P. Zhang.(2008).Electric Current-induced Failure of 200-nm-thick Gold Interconnects.Journal of Materials Science & Technology,24(6),895-898.
MLA B. Zhang,et al."Electric Current-induced Failure of 200-nm-thick Gold Interconnects".Journal of Materials Science & Technology 24.6(2008):895-898.
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