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Effect of deposition processes on residual stress profiles along the thickness in (Ti,Al)N films
S. S. Zhao; Y. Yang; J. B. Li; J. Gong; C. Sun
2008
发表期刊Surface & Coatings Technology
ISSN0257-8972
卷号202期号:21页码:5185-5189
摘要The effect of deposition processes on the distribution of residual stresses in the thickness of the (Ti,Al)N films prepared by arc ion plating (AlP) was investigated in the present work, which indicates that the stress distribution exhibits a "bell" shape and the maximum compressive stress appears in the layer near the surface. The residual stress increases with the thickness of a film and the substrate bias voltage, respectively. The stress distribution can be altered, and the adhesion of the film/substrate can be improved by optimizing the deposition parameters. Finally, a film with a thickness of 7.57 mu m was successfully directly deposited on the substrate through optimizing the bias voltage. (C) 2008 Elsevier B.V. All rights reserved.
部门归属[zhao, sheng-sheng; yang, ying; li, jia-bao; gong, jun; sun, chao] chinese acad sci, inst met res, div surface engn mat, shenyang 110016, peoples r china.;sun, c (reprint author), chinese acad sci, inst met res, div surface engn mat, shenyang 110016, peoples r china;csun@imr.ac.cn
关键词Arc Ion Plating (Ti Stress Distribution Al)n Sputtered Hard Coatings Pvd Coatings Adhesion Strength Thin-films Bias
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WOS记录号WOS:000258588400019
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被引频次:20[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/33372
专题中国科学院金属研究所
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S. S. Zhao,Y. Yang,J. B. Li,et al. Effect of deposition processes on residual stress profiles along the thickness in (Ti,Al)N films[J]. Surface & Coatings Technology,2008,202(21):5185-5189.
APA S. S. Zhao,Y. Yang,J. B. Li,J. Gong,&C. Sun.(2008).Effect of deposition processes on residual stress profiles along the thickness in (Ti,Al)N films.Surface & Coatings Technology,202(21),5185-5189.
MLA S. S. Zhao,et al."Effect of deposition processes on residual stress profiles along the thickness in (Ti,Al)N films".Surface & Coatings Technology 202.21(2008):5185-5189.
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