Heat-activated structural evolution of sol-gel-derived ZnO thin films

IMR OpenIR

	Heat-activated structural evolution of sol-gel-derived ZnO thin films; Heat-activated structural evolution of sol-gel-derived ZnO thin films
	M. W. Zhu; J. H. Xia; R. J. Hong; H. Abu-Samra; H. Huang; T. Staedler; J. Gong; C. Sun; X. Jiang
	2008 ; 2008
发表期刊	Journal of Crystal Growth ; Journal of Crystal Growth
ISSN	0022-0248 ; 0022-0248
卷号	310 期号:4 页码:816-823
摘要	Zinc oxide (ZnO) thin films were prepared by a sol-gel dip coating process. The present work focuses on the crystallization behavior of these films during heating. In particular, the cases of (a) change of heating temperature and (b) change of heating time are studied. The characterization of the films by various analytical methods shows a correlation between heating temperature and film structure. At lower heating temperatures, granular structure dominates the films, while the films feature a columnar grain growth at higher-heating temperatures. The transition from granular to columnar structure is studied by the variation of heating times at a fixed-heating temperature. The evolution mechanism of the microstructure has been discussed in terms of continuous growth of the grains aided by an enhanced diffusion process. (C) 2008 Elsevier B.V. All rights reserved.; Zinc oxide (ZnO) thin films were prepared by a sol-gel dip coating process. The present work focuses on the crystallization behavior of these films during heating. In particular, the cases of (a) change of heating temperature and (b) change of heating time are studied. The characterization of the films by various analytical methods shows a correlation between heating temperature and film structure. At lower heating temperatures, granular structure dominates the films, while the films feature a columnar grain growth at higher-heating temperatures. The transition from granular to columnar structure is studied by the variation of heating times at a fixed-heating temperature. The evolution mechanism of the microstructure has been discussed in terms of continuous growth of the grains aided by an enhanced diffusion process. (C) 2008 Elsevier B.V. All rights reserved.
部门归属	[zhu, m. w.; xia, j. h.; hong, r. j.; abu-samra, h.; staedler, t.; jiang, x.] univ siegen, inst mat engn, d-57076 siegen, germany. [zhu, m. w.; huang, h.; gong, j.; sun, c.; jiang, x.] chinese acad sci, inst met res, shenyang 110016, peoples r china.;jiang, x (reprint author), univ siegen, inst mat engn, paul bonatz str 9-11, d-57076 siegen, germany;xinjiang@uni-siegen.de ; [zhu, m. w.; xia, j. h.; hong, r. j.; abu-samra, h.; staedler, t.; jiang, x.] univ siegen, inst mat engn, d-57076 siegen, germany. [zhu, m. w.; huang, h.; gong, j.; sun, c.; jiang, x.] chinese acad sci, inst met res, shenyang 110016, peoples r china.;jiang, x (reprint author), univ siegen, inst mat engn, paul bonatz str 9-11, d-57076 siegen, germany;xinjiang@uni-siegen.de
关键词	Post-heat Treatment Post-heat Treatment Thin Film Thin Film Epitaxial Growth Epitaxial Growth Zinc Oxides Zinc Oxides Zinc-oxide Films Zinc-oxide Films Transparent Conductors Transparent Conductors Optical-properties Optical-properties Devices Devices Microstructure Microstructure Orientation Orientation Morphology Morphology Substrate Substrate Surface Surface Growth Growth
URL	查看原文 ; 查看原文
WOS记录号	WOS:000253650000014 ; WOS:000253650000014
引用统计	被引频次：39[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/33408
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	M. W. Zhu,J. H. Xia,R. J. Hong,et al. Heat-activated structural evolution of sol-gel-derived ZnO thin films, Heat-activated structural evolution of sol-gel-derived ZnO thin films[J]. Journal of Crystal Growth, Journal of Crystal Growth,2008, 2008,310, 310(4):816-823, 816-823.
APA	M. W. Zhu.,J. H. Xia.,R. J. Hong.,H. Abu-Samra.,H. Huang.,...&X. Jiang.(2008).Heat-activated structural evolution of sol-gel-derived ZnO thin films.Journal of Crystal Growth,310(4),816-823.
MLA	M. W. Zhu,et al."Heat-activated structural evolution of sol-gel-derived ZnO thin films".Journal of Crystal Growth 310.4(2008):816-823.