Investigation of thermal expansion of PI/SiO2 composite films by CCD imaging technique from - 120 to 200 degrees C

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	Investigation of thermal expansion of PI/SiO2 composite films by CCD imaging technique from - 120 to 200 degrees C
	X. G. Chen; J. D. Guo; B. Zheng; Y. Q. Li; S. Y. Fu; G. H. He
	2007
发表期刊	Composites Science and Technology
ISSN	0266-3538
卷号	67 期号:14 页码:3006-3013
摘要	The thermal expansion of the reference sample, pure copper film in the temperature range of - 120 to 200 degrees C was first measured using the newly improved CCD imaging technique for measurement of thermal expansion of thin films. The results showed good accordance with the recommended data given by TPRC (Thermophysical Properties Research Centre, USA) handbook, verifying that the present method is valid for measuring thermal expansion of films. Then, the thermal expansion TE (Delta L/L-0) of silica/polyimide composite films with different SiO2 fractions i.e. 0, 1, 3, 5, 8, 10 and 15 wt% prepared using the sol-gel technique was obtained in the temperature range of - 120 to 200 degrees C using the newly improved CCD method and the differential coefficient thermal expansion (CTE) can be deduced by Delta L/L-0 similar to temperature relation. The CTE Of SiO2/PI Composite films decreased with the increase Of SiO2 content and the decrease of temperature. An empirical equation of CTE of SiO2/PI with SiO2, content has been given in this paper. (C) 2007 Elsevier Ltd. All rights reserved.
部门归属	chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china. chinese acad sci, tech inst phys & chem, beijing 100080, peoples r china.;he, gh (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china;ghhe@imr.ac.cn
关键词	Silica/polyimide Composite Film Thermal Expansion Ccd Imaging Technique Low Temperature Elevated Temperature Mechanical-properties Cryogenic Properties Nanocomposite Films Polyimide Films Low-temperature Silica
URL	查看原文
WOS记录号	WOS:000250074400016
引用统计	被引频次：24[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/33458
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	X. G. Chen,J. D. Guo,B. Zheng,et al. Investigation of thermal expansion of PI/SiO2 composite films by CCD imaging technique from - 120 to 200 degrees C[J]. Composites Science and Technology,2007,67(14):3006-3013.
APA	X. G. Chen,J. D. Guo,B. Zheng,Y. Q. Li,S. Y. Fu,&G. H. He.(2007).Investigation of thermal expansion of PI/SiO2 composite films by CCD imaging technique from - 120 to 200 degrees C.Composites Science and Technology,67(14),3006-3013.
MLA	X. G. Chen,et al."Investigation of thermal expansion of PI/SiO2 composite films by CCD imaging technique from - 120 to 200 degrees C".Composites Science and Technology 67.14(2007):3006-3013.