| Current-induced phase partitioning in eutectic indium-tin pb-free solder interconnect |
| J. P. Daghfal; J. K. Shang
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| 2007
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| 发表期刊 | Journal of Electronic Materials
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| ISSN | 0361-5235
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| 卷号 | 36期号:10页码:1372-1377 |
| 摘要 | Structural changes from high-density electric currents were examined in a eutectic In-Sn/Cu interconnect. Under electrical loading, Sn and In migrated in opposite directions, creating a partition of the Sn- and In-rich phases between the anode and the cathode. At the anode, a net gain of Sn atoms resulted in the formation of massive, columnar hillocks on the surface, but a net loss of In led to dissolution and disappearance of the In-rich intermetallic layer. At the cathode, the exodus of Sn left valleys adjacent to the In-rich regions on the surface, while the amount of the In-rich phase grew, due to the net influx of In at the expense of the In-rich intermetallic layer. |
| 部门归属 | cas, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china. univ illinois, dept mat sci & engn, urbana, il 61801 usa.;shang, jk (reprint author), cas, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china;jkshang@uiuc.edu
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| 关键词 | In-sn Solder
Electromigration
Current Stressing
Hillocks
Interface
Mechanical-properties
Microstructure
Joints
Electromigration
Creep
Bi
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| URL | 查看原文
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| WOS记录号 | WOS:000250149200023
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| 引用统计 |
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| 文献类型 | 期刊论文
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| 条目标识符 | http://ir.imr.ac.cn/handle/321006/33487
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| 专题 | 中国科学院金属研究所
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推荐引用方式
GB/T 7714 |
J. P. Daghfal,J. K. Shang. Current-induced phase partitioning in eutectic indium-tin pb-free solder interconnect[J]. Journal of Electronic Materials,2007,36(10):1372-1377.
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| APA |
J. P. Daghfal,&J. K. Shang.(2007).Current-induced phase partitioning in eutectic indium-tin pb-free solder interconnect.Journal of Electronic Materials,36(10),1372-1377.
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| MLA |
J. P. Daghfal,et al."Current-induced phase partitioning in eutectic indium-tin pb-free solder interconnect".Journal of Electronic Materials 36.10(2007):1372-1377.
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