Photoluminescence study of Ge nanocrystals irradiated by reactor neutron flux

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	Photoluminescence study of Ge nanocrystals irradiated by reactor neutron flux; Photoluminescence study of Ge nanocrystals irradiated by reactor neutron flux
	S. B. Dun; T. C. Lu; Q. Hu; Y. W. Hu; C. F. You; S. B. Zhang; B. Tang; J. L. Dai; N. K. Huang
	2007 ; 2007
发表期刊	Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms ; Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms
ISSN	0168-583X ; 0168-583X
卷号	264 期号:2 页码:272-276
摘要	Samples of Ge nanocrystals (Ge-ncs) embedded in amorphous SiO2 film were prepared by Ge ion implantation and subsequent primary thermal annealing. These samples were irradiated by neutron flux in a nuclear reactor followed by the second annealing. Irradiation with thermal neutrons leads to doping of nanocrystals with Ga, As and Se impurities due to nuclear transmutation of isotope Ge-70 into Ga-71, isotope 74 Ge into 75 As, isotope 76 Ge into 77 Se, respectively (neutron transmutation doping, NTD). Irradiation with fast neutrons leads to appearance of radiation damages, which are expected to be removed after the second annealing. Photoluminescence (PL) measurements show that PL is quenched after neutron irradiation, and restored after annealing higher than 500 degrees C. The PL spectra of doped Ge-nes samples show more intense exciton radiative luminescence than of undoped Ge-ncs sample, which is related to that the donor and acceptor impurities recombine the nonradiative centers in the interface of Ge-ncs and SiO2 matrix, and enhance the probability of exciton recombination. (c) 2007 Elsevier B.V. All rights reserved.; Samples of Ge nanocrystals (Ge-ncs) embedded in amorphous SiO2 film were prepared by Ge ion implantation and subsequent primary thermal annealing. These samples were irradiated by neutron flux in a nuclear reactor followed by the second annealing. Irradiation with thermal neutrons leads to doping of nanocrystals with Ga, As and Se impurities due to nuclear transmutation of isotope Ge-70 into Ga-71, isotope 74 Ge into 75 As, isotope 76 Ge into 77 Se, respectively (neutron transmutation doping, NTD). Irradiation with fast neutrons leads to appearance of radiation damages, which are expected to be removed after the second annealing. Photoluminescence (PL) measurements show that PL is quenched after neutron irradiation, and restored after annealing higher than 500 degrees C. The PL spectra of doped Ge-nes samples show more intense exciton radiative luminescence than of undoped Ge-ncs sample, which is related to that the donor and acceptor impurities recombine the nonradiative centers in the interface of Ge-ncs and SiO2 matrix, and enhance the probability of exciton recombination. (c) 2007 Elsevier B.V. All rights reserved.
部门归属	[dun, shaobo; lu, tiecheng; hu, qiang; hu, youwen; you, caofeng; zhang, songbao] sichuan univ, dept phys, chengdu 610064, sichuan, peoples r china. [dun, shaobo; lu, tiecheng; hu, qiang; hu, youwen; you, caofeng; zhang, songbao] sichuan univ, minist educ, key lab radiat phys & technol, chengdu 610064, sichuan, peoples r china. [lu, tiecheng] chinese acad sci, int ctr mat phys, shenyang 110015, peoples r china. [zhang, songbao; tang, bin; dai, junlong] china acad engn phys, inst nucl phys & chem, sichuan 621900, mianyang, peoples r china. [huang, ningkang] sichuan univ, inst nucl sci & technol, chengdu 610064, peoples r china. [huang, ningkang] sichuan univ, key lab radiat phys & technol, minist educ, chengdu 610064, peoples r china.;lu, tc (reprint author), sichuan univ, dept phys, 29 wangjiang rd, chengdu 610064, sichuan, peoples r china;dunshaobo@gmail.com lutiecheng@scu.edu.cn ; [dun, shaobo; lu, tiecheng; hu, qiang; hu, youwen; you, caofeng; zhang, songbao] sichuan univ, dept phys, chengdu 610064, sichuan, peoples r china. [dun, shaobo; lu, tiecheng; hu, qiang; hu, youwen; you, caofeng; zhang, songbao] sichuan univ, minist educ, key lab radiat phys & technol, chengdu 610064, sichuan, peoples r china. [lu, tiecheng] chinese acad sci, int ctr mat phys, shenyang 110015, peoples r china. [zhang, songbao; tang, bin; dai, junlong] china acad engn phys, inst nucl phys & chem, sichuan 621900, mianyang, peoples r china. [huang, ningkang] sichuan univ, inst nucl sci & technol, chengdu 610064, peoples r china. [huang, ningkang] sichuan univ, key lab radiat phys & technol, minist educ, chengdu 610064, peoples r china.;lu, tc (reprint author), sichuan univ, dept phys, 29 wangjiang rd, chengdu 610064, sichuan, peoples r china;dunshaobo@gmail.com lutiecheng@scu.edu.cn
关键词	Ge Nanocrystals Ge Nanocrystals Neutron Transmutation Doping Neutron Transmutation Doping Photoluminescence Photoluminescence Raman Raman Scattering Scattering Doped Si Nanocrystals Doped Si Nanocrystals Electron-spin-resonance Electron-spin-resonance Semiconductor Semiconductor Nanocrystals Nanocrystals N-type N-type Implanted Sio2-films Implanted Sio2-films Silicon Nanocrystals Silicon Nanocrystals Porous Porous Silicon Silicon Raman Raman Luminescence Luminescence Temperature Temperature
URL	查看原文 ; 查看原文
WOS记录号	WOS:000251873600010 ; WOS:000251873600010
引用统计	被引频次：2[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/33514
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	S. B. Dun,T. C. Lu,Q. Hu,et al. Photoluminescence study of Ge nanocrystals irradiated by reactor neutron flux, Photoluminescence study of Ge nanocrystals irradiated by reactor neutron flux[J]. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms,2007, 2007,264, 264(2):272-276, 272-276.
APA	S. B. Dun.,T. C. Lu.,Q. Hu.,Y. W. Hu.,C. F. You.,...&N. K. Huang.(2007).Photoluminescence study of Ge nanocrystals irradiated by reactor neutron flux.Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms,264(2),272-276.
MLA	S. B. Dun,et al."Photoluminescence study of Ge nanocrystals irradiated by reactor neutron flux".Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms 264.2(2007):272-276.