Anisotropic current-induced electroresistance effect in low-doped La0.9Sr0.1MnO3 thin films

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	Anisotropic current-induced electroresistance effect in low-doped La0.9Sr0.1MnO3 thin films
	J. F. Feng; K. Zhao; J. G. Zhao; Y. H. Huang; M. He; H. B. Lu; X. F. Han; W. S. Zhan
	2007
发表期刊	Physica B-Condensed Matter
ISSN	0921-4526
卷号	387 期号:1-2 页码:156-160
摘要	We have studied the giant negative electroresistance (ER) in strips and pillars of single-layer La0.9Sr0.1MnO3 films fabricated by microfabrication patterning processes, and observed the different voltage-current (V-I) characteristics under current-in-plane (CIP) and current-perpendicular-to-plane (CPP) measurement modes, around room temperature. For the CIP mode, V-I curves show an asymmetry with jumps at the negative bias currents, while a symmetrical hysteresis against the polarity for the CPP one. The mechanism is illuminated in the letter. Furthermore, a large ER is obtained for both modes and the ER ratios increase monotonically with the temperature and bias current, suggestive of a promising potential in future device developments. (c) 2006 Elsevier B.V. All rights reserved.
部门归属	chinese acad sci, inst phys, grp l03, state key lab magnetism,beijing natl lab condense, beijing 100080, peoples r china. chinese acad sci, inst phys, key lab opt phys, beijing natl lab condensed matter phys, beijing 100080, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china. china univ petr, dept math & phys, beijing 102249, peoples r china.;zhao, k (reprint author), chinese acad sci, inst phys, grp l03, state key lab magnetism,beijing natl lab condense, pob 603, beijing 100080, peoples r china;kzhao@aphy.iphy.ac.cn
关键词	Manganites Thin Films Electrical Transport Properties Insulator-metal Transition Colossal Magnetoresistance Manganese Oxide La1-xsrxmno3 Perovskites Manganites
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WOS记录号	WOS:000243886100026
引用统计	被引频次：4[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/33530
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	J. F. Feng,K. Zhao,J. G. Zhao,et al. Anisotropic current-induced electroresistance effect in low-doped La0.9Sr0.1MnO3 thin films[J]. Physica B-Condensed Matter,2007,387(1-2):156-160.
APA	J. F. Feng.,K. Zhao.,J. G. Zhao.,Y. H. Huang.,M. He.,...&W. S. Zhan.(2007).Anisotropic current-induced electroresistance effect in low-doped La0.9Sr0.1MnO3 thin films.Physica B-Condensed Matter,387(1-2),156-160.
MLA	J. F. Feng,et al."Anisotropic current-induced electroresistance effect in low-doped La0.9Sr0.1MnO3 thin films".Physica B-Condensed Matter 387.1-2(2007):156-160.