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The Raman spectroscopy of neutron transmutation doping isotope (74)Germanium nanocrystals embedded in SiO2 matrix
Y. W. Hu; T. C. Lu; S. B. Dun; Q. Hu; N. K. Huang; S. B. Zhang; B. Tang; J. L. Dai; L. Resnick; I. Shlimak; S. Zhu; Q. M. Wei; L. M. Wang
2007
发表期刊Solid State Communications
ISSN0038-1098
卷号141期号:9页码:514-518
摘要We have succeeded in doping arsenic (As) impurities into isotope germanium nanocrystals (nc-Ge-74) uniformly dispersed in a SiO2 matrix by using the neutron transmutation doping (NTD) method. The samples' inner structural transmutation is studied by combining Raman scattering, Xray fluorescence (XRF), X-ray photoelectron spectroscopy (XPS) and Transmission electron microscope (TEM) methods. The Raman spectrum of the doped sample exhibits a relative intensity increase of the low frequency tail, blue shift of the main Raman peak (similar to 300 cm(-1)) and a high frequency tail, while the undoped sample does not. Together with the XRF, XPS and TEM, we believe that the relative intensity increase of the low frequency tail arises from an increase of amorphous Ge-74 (a-Ge-74) induced by the irradiation damage. The blue shift of the main Raman peak comes from the mismatch of the crystal lattice which arose from the As impurity introduction. And the high frequency tail is due to transmuted-impurities (As) in the nc-Ge-74 which was introduced by NTD. (c) 2006 Elsevier Ltd. All rights reserved.
部门归属sichuan univ, dept phys, chengdu 610064, peoples r china. sichuan univ, key lab radiat phys & technol, minist educ, chengdu 610064, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110015, peoples r china. china acad engn phys, inst nucl phys & chem, mianyang 621900, peoples r china. bar ilan univ, dept phys, il-52900 ramat gan, israel. univ michigan, dept nucl engn & radiol sci, ann arbor, mi 48109 usa.;lu, tc (reprint author), sichuan univ, dept phys, 29 wanjiang rd, chengdu 610064, peoples r china;lutiecheng@vip.sina.com
关键词Isotope Ge Nanocrystals Transmuted Impurities Laser Raman Scattering Neutron Transmutation Doping Visible Photoluminescence Semiinsulating Gaas Hopping Conduction Thin-films Scattering Germanium Sio2-films Plasmons Phonons Growth
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WOS记录号WOS:000244106800008
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被引频次:11[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/33590
专题中国科学院金属研究所
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Y. W. Hu,T. C. Lu,S. B. Dun,et al. The Raman spectroscopy of neutron transmutation doping isotope (74)Germanium nanocrystals embedded in SiO2 matrix[J]. Solid State Communications,2007,141(9):514-518.
APA Y. W. Hu.,T. C. Lu.,S. B. Dun.,Q. Hu.,N. K. Huang.,...&L. M. Wang.(2007).The Raman spectroscopy of neutron transmutation doping isotope (74)Germanium nanocrystals embedded in SiO2 matrix.Solid State Communications,141(9),514-518.
MLA Y. W. Hu,et al."The Raman spectroscopy of neutron transmutation doping isotope (74)Germanium nanocrystals embedded in SiO2 matrix".Solid State Communications 141.9(2007):514-518.
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