Single adatom site exchange during the Ge growth on group V element covered Si(001)

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	Single adatom site exchange during the Ge growth on group V element covered Si(001)
	E. Z. Liu; C. Y. Wang
	2007
发表期刊	Scripta Materialia
ISSN	1359-6462
卷号	56 期号:2 页码:113-116
摘要	The site exchange between Ge and surfactant atoms in the growth of Ge on the group V element-covered Si(001) has been studied using first-principles total energy calculations. On the Bi-covered Si(001) and the As-covered Si(001), a single adatom site, exchange process can occur energetically, but with different pathways. The energy barriers for the single adatom site exchange are very small. The site exchange can therefore occur very easily. This will suppress the Ge diffusion, and favors the layer-by-layer growth mode. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
部门归属	tsing hua univ, dept phys, beijing 100084, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china.;liu, ez (reprint author), tsing hua univ, dept phys, beijing 100084, peoples r china;lez02@mails.tsinghua.edu.cn
关键词	Surface Segregation Surfactant Semiconductor Kinetics First Principle Electron Theory Mediated Epitaxial-growth Dimer-exchange Surfactants Diffusion Energy
URL	查看原文
WOS记录号	WOS:000242513800009
引用统计	被引频次：1[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/33692
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	E. Z. Liu,C. Y. Wang. Single adatom site exchange during the Ge growth on group V element covered Si(001)[J]. Scripta Materialia,2007,56(2):113-116.
APA	E. Z. Liu,&C. Y. Wang.(2007).Single adatom site exchange during the Ge growth on group V element covered Si(001).Scripta Materialia,56(2),113-116.
MLA	E. Z. Liu,et al."Single adatom site exchange during the Ge growth on group V element covered Si(001)".Scripta Materialia 56.2(2007):113-116.