Synthesis and properties of one-dimensional aluminum nitride nanostructures

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	Synthesis and properties of one-dimensional aluminum nitride nanostructures
	Y. B. Tang; H. T. Cong; H. M. Cheng
	2007
发表期刊	Nano
ISSN	1793-2920
卷号	2 期号:6 页码:307-331
摘要	This article presents a brief review of the recent research progresses achieved in the field of one-dimensional (1D) aluminum nitride (AlN) nanostructures. It mainly covers three aspects: The first one is to introduce the synthetic strategies for several classic 1D AlN nanostructures (such as nano fibers, nanobelts, nanorods, nanowires, nanotips, etc.) including template-confined reaction, arc discharge, catalyst-assisted growth, and vapor transport and related growth methods. The second is to elaborate some special physical properties, such as field emission and photoluminescence, which associate with the uniqueness of 1D AlN nanostructures. It is revealed that aligned AlN 1D nanostructures have low turn-on and threshold voltages, high emission current and small current fluctuation, and that the photoluminescence of AlN nanobelts are different from those of conventional AlN material. The third is to briefly illustrate the potential application of these 1D AlN nanostructures in composite materials. It is found that AlN nanowire is a good reinforcement for improving the mechanical and thermal properties of metal matrix composites, which can be expected to be utilized as packaging material with high strength and low thermal expansion. Finally, we summarize the major challenges in this field. Among them, a thorough understanding of the growth mechanism of 1D AlN nanostructures is the most important issue, and more precisely controlled growth is required to obtain tailored AlN nanostructures according to device applications.
部门归属	[tang, yong-bing; cong, hong-tao; cheng, hui-ming] chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china.;cong, ht (reprint author), chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china;ybtang@imr.ac.cn htcong@imr.ac.cn cheng@imr.ac.cn
关键词	One-dimensional Nanostructures Aln Synthesis Properties Al-aln Composites Field-emission Properties Carbon-nanotube-template Metal-matrix Composites Si-doped Aln Semiconductor Nanowires Electron-affinity Thermal-expansion Vapor-deposition Low-temperature
URL	查看原文
WOS记录号	WOS:000255896800001
引用统计	被引频次：11[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/33830
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	Y. B. Tang,H. T. Cong,H. M. Cheng. Synthesis and properties of one-dimensional aluminum nitride nanostructures[J]. Nano,2007,2(6):307-331.
APA	Y. B. Tang,H. T. Cong,&H. M. Cheng.(2007).Synthesis and properties of one-dimensional aluminum nitride nanostructures.Nano,2(6),307-331.
MLA	Y. B. Tang,et al."Synthesis and properties of one-dimensional aluminum nitride nanostructures".Nano 2.6(2007):307-331.