Synthesis and photoluminescent property of AlN nanobelt array

IMR OpenIR

	Synthesis and photoluminescent property of AlN nanobelt array; Synthesis and photoluminescent property of AlN nanobelt array
	Y. B. Tang; H. T. Cong; F. Li; H. M. Cheng
	2007 ; 2007
发表期刊	Diamond and Related Materials ; Diamond and Related Materials
ISSN	0925-9635 ; 0925-9635
卷号	16 期号:3 页码:537-541
摘要	An AlN nanobelt array has been synthesized on Si substrate by an oxide-assisted vapor transport and condensation method at 900 degrees C. The nanobelts are 1-3 mu m in length, 20-150 mu m in width, and the ratio of width to thickness is in the range of 2-5. The nanobelts are single-crystalline hexagonal wurtzite AlN with [001] growth direction. The growth mechanism and photoluminescent property of the AlN nanobelt array were discussed. (c) 2006 Elsevier B.V. All rights reserved.; An AlN nanobelt array has been synthesized on Si substrate by an oxide-assisted vapor transport and condensation method at 900 degrees C. The nanobelts are 1-3 mu m in length, 20-150 mu m in width, and the ratio of width to thickness is in the range of 2-5. The nanobelts are single-crystalline hexagonal wurtzite AlN with [001] growth direction. The growth mechanism and photoluminescent property of the AlN nanobelt array were discussed. (c) 2006 Elsevier B.V. All rights reserved.
部门归属	chinese acad sci, met res inst, shenyang natl lab mat sci, shenyang 110016, peoples r china.;cong, ht (reprint author), chinese acad sci, met res inst, shenyang natl lab mat sci, shenyang 110016, peoples r china;htcong@imr.ac.cn ; chinese acad sci, met res inst, shenyang natl lab mat sci, shenyang 110016, peoples r china.;cong, ht (reprint author), chinese acad sci, met res inst, shenyang natl lab mat sci, shenyang 110016, peoples r china;htcong@imr.ac.cn
关键词	Aluminum Nitride Aluminum Nitride Nanostructures Nanostructures Optical Properties Optical Properties Nanocrystalline Aluminum Nitride Nanocrystalline Aluminum Nitride Field-emission Field-emission Growth Growth Nanotubes Nanotubes Nanowires Nanowires Parameters Parameters Defects Defects Route Route Gan Gan
URL	查看原文 ; 查看原文
WOS记录号	WOS:000244827100020 ; WOS:000244827100020
引用统计	被引频次：46[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/33831
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	Y. B. Tang,H. T. Cong,F. Li,et al. Synthesis and photoluminescent property of AlN nanobelt array, Synthesis and photoluminescent property of AlN nanobelt array[J]. Diamond and Related Materials, Diamond and Related Materials,2007, 2007,16, 16(3):537-541, 537-541.
APA	Y. B. Tang,H. T. Cong,F. Li,&H. M. Cheng.(2007).Synthesis and photoluminescent property of AlN nanobelt array.Diamond and Related Materials,16(3),537-541.
MLA	Y. B. Tang,et al."Synthesis and photoluminescent property of AlN nanobelt array".Diamond and Related Materials 16.3(2007):537-541.