Fatigue suppression of ferroelectric Pb1-xBax(Zr0.52Ti0.48)O-3 thin films prepared by sol-gel method

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	Fatigue suppression of ferroelectric Pb1-xBax(Zr0.52Ti0.48)O-3 thin films prepared by sol-gel method
	Y. Wang; K. F. Wang; C. Zhu; T. Wei; J. S. Zhu; J. M. Liu
	2007
发表期刊	Journal of Applied Physics
ISSN	0021-8979
卷号	101 期号:4
摘要	The polarization fatigue behavior of ferroelectric Pb1-xBax(Zr0.52Ti0.48)O-3 (PBZT) thin films deposited on Pt-coated silicon wafers by sol-gel method is investigated. The fatigue endurance is significantly enhanced upon Ba doping and almost fatigue-free performance up to 1010 switching cycles for PBZT (x=0.1) thin films are observed at room temperature. It is revealed that Ba doping up to x=0.1 results in a 70% decrease of oxygen vacancies in the films. The improved fatigue endurance is attributed to the enhanced oxygen ion stability and suppressed oxygen vacancies.
部门归属	nanjing univ, nanjing natl lab microstruct, nanjing 210093, peoples r china. chinese acad sci, int ctr mat phys, shenyang, peoples r china.;liu, jm (reprint author), nanjing univ, nanjing natl lab microstruct, nanjing 210093, peoples r china;liujm@nju.edu.cn
关键词	Polarization Fatigue Electrodes Capacitors Memories Titanate Scenarios Model
URL	查看原文
WOS记录号	WOS:000244530800102
引用统计	被引频次：22[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/33881
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	Y. Wang,K. F. Wang,C. Zhu,et al. Fatigue suppression of ferroelectric Pb1-xBax(Zr0.52Ti0.48)O-3 thin films prepared by sol-gel method[J]. Journal of Applied Physics,2007,101(4).
APA	Y. Wang,K. F. Wang,C. Zhu,T. Wei,J. S. Zhu,&J. M. Liu.(2007).Fatigue suppression of ferroelectric Pb1-xBax(Zr0.52Ti0.48)O-3 thin films prepared by sol-gel method.Journal of Applied Physics,101(4).
MLA	Y. Wang,et al."Fatigue suppression of ferroelectric Pb1-xBax(Zr0.52Ti0.48)O-3 thin films prepared by sol-gel method".Journal of Applied Physics 101.4(2007).