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Enhancement of photovoltaic effect in La0.9Sr0.1MnO3/Si heterojunction by side illumination
J. Xing; K. Zhao; G. Z. Liu; M. He; K. J. Jin; H. B. Lu
2007
发表期刊Journal of Physics D-Applied Physics
ISSN0022-3727
卷号40期号:19页码:5892-5895
摘要The side-illumination-enhanced photovoltaic effect has been studied in La0.9Sr0.1MnO3/Si heterojunctions fabricated by laser molecular beam epitaxy. When a He-Ne laser illuminated the La0.9Sr0.1MnO3 film surface, a stable photovoltage was produced and the responsivity is -0.17mVmW(-1). An enhancement of the photovoltaic effect occurred when the La0.9Sr0.1MnO3/ Si interface was illuminated directly by side illumination, and the steady responsivity reached -6.87mVmW(-1). This work demonstrates an effective way to improve the photovoltaic responsivity of the perovskite oxide heterojunctions.
部门归属china univ petr, dept math & phys, beijing 102249, peoples r china. chinese acad sci, beijing natl lab condensed matter phys, inst phys, beijing 100080, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china.;zhao, k (reprint author), china univ petr, dept math & phys, beijing 102249, peoples r china;zhk@cup.edu.cn hblu@aphy.iphy.ac.cn
关键词Photocarrier Injection Manganite Heterostructure
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WOS记录号WOS:000250604000017
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被引频次:14[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/33943
专题中国科学院金属研究所
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GB/T 7714
J. Xing,K. Zhao,G. Z. Liu,et al. Enhancement of photovoltaic effect in La0.9Sr0.1MnO3/Si heterojunction by side illumination[J]. Journal of Physics D-Applied Physics,2007,40(19):5892-5895.
APA J. Xing,K. Zhao,G. Z. Liu,M. He,K. J. Jin,&H. B. Lu.(2007).Enhancement of photovoltaic effect in La0.9Sr0.1MnO3/Si heterojunction by side illumination.Journal of Physics D-Applied Physics,40(19),5892-5895.
MLA J. Xing,et al."Enhancement of photovoltaic effect in La0.9Sr0.1MnO3/Si heterojunction by side illumination".Journal of Physics D-Applied Physics 40.19(2007):5892-5895.
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