Abnormal polarity effect of electromigration on intermetallic compound formation in Sn-9Zn solder interconnect; Abnormal polarity effect of electromigration on intermetallic compound formation in Sn-9Zn solder interconnect | |
X. F. Zhang; J. D. Guo; J. K. Shang | |
2007 ; 2007 | |
Source Publication | Scripta Materialia
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ISSN | 1359-6462 ; 1359-6462 |
Volume | 57Issue:6Pages:513-516 |
Abstract | Interfacial reactions in a eutectic Sn-Zn solder/Cu interconnect were investigated under electric current stressing. After applying a constant direct current at 4.26 x 10(4) A cm(-2) for 166 h, an abnormal "polarity effect" was found where the intermetallic compound layer at the cathode was about 2.3 mu m thicker than that at the anode. Upon increasing the temperature to about 185 degrees C, Cu-Zn compounds were replaced by Cu-Sn compounds at the anode and by a mixture of Cu-Zn and Cu-Sn compounds at the cathode. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.; Interfacial reactions in a eutectic Sn-Zn solder/Cu interconnect were investigated under electric current stressing. After applying a constant direct current at 4.26 x 10(4) A cm(-2) for 166 h, an abnormal "polarity effect" was found where the intermetallic compound layer at the cathode was about 2.3 mu m thicker than that at the anode. Upon increasing the temperature to about 185 degrees C, Cu-Zn compounds were replaced by Cu-Sn compounds at the anode and by a mixture of Cu-Zn and Cu-Sn compounds at the cathode. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. |
description.department | chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china. univ illinois, dept mat sci & engn, urbana, il 61801 usa.;guo, jd (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china;jdguo@imr.ac.cn ; chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china. univ illinois, dept mat sci & engn, urbana, il 61801 usa.;guo, jd (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china;jdguo@imr.ac.cn |
Keyword | Abnormal Polarity Effect Abnormal Polarity Effect Electromigration Electromigration Intermetallic Compound Intermetallic Compound |
URL | 查看原文 ; 查看原文 |
WOS ID | WOS:000248638600017 ; WOS:000248638600017 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.imr.ac.cn/handle/321006/34051 |
Collection | 中国科学院金属研究所 |
Recommended Citation GB/T 7714 | X. F. Zhang,J. D. Guo,J. K. Shang. Abnormal polarity effect of electromigration on intermetallic compound formation in Sn-9Zn solder interconnect, Abnormal polarity effect of electromigration on intermetallic compound formation in Sn-9Zn solder interconnect[J]. Scripta Materialia, Scripta Materialia,2007, 2007,57, 57(6):513-516, 513-516. |
APA | X. F. Zhang,J. D. Guo,&J. K. Shang.(2007).Abnormal polarity effect of electromigration on intermetallic compound formation in Sn-9Zn solder interconnect.Scripta Materialia,57(6),513-516. |
MLA | X. F. Zhang,et al."Abnormal polarity effect of electromigration on intermetallic compound formation in Sn-9Zn solder interconnect".Scripta Materialia 57.6(2007):513-516. |
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