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Theoretical calculations of the EPR parameters for Yb3+ ions in YVO4, HfSiO4 and ThSiO4
H. N. Dong; S. Y. Wu; C. K. Duan
2006
发表期刊Journal of Alloys and Compounds
ISSN0925-8388
卷号408页码:750-752
摘要Based on the crystal-field theory, the EPR parameters g factors g(parallel to), g(perpendicular to) of Yb3+ and hyperfine structure constants A(parallel to), A(perpendicular to) of Yb-171(3+) and Yb-173(3+) isotopes in zircon-structure YVO4, HfSiO4 and ThSiO4 crystals are calculated by the perturbation formulae. In the calculations, the contributions of various admixtures and interactions such as the J-mixing, two-order perturbation term, the covalency as well as the local lattice relaxation are all considered. The crystal field parameters used in the calculations are obtained from the superposition model. The calculated results are in reasonable agreement with the observed values. (c) 2005 Elsevier B.V. All rights reserved.
部门归属chongqing univ posts & telecommun, inst appl phys, chongqing 400065, peoples r china. chongqing univ posts & telecommun, coll elect engn, chongqing 400065, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china. univ elect sci & technol china, dept appl phys, chengdu 610054, peoples r china.;dong, hn (reprint author), chongqing univ posts & telecommun, inst appl phys, chongqing 400065, peoples r china;donghn@cqupt.edu.cn
关键词Electron Paramagnetic Resonance Crystal-field Theory Yb3++ Zircon Single-crystals Laser Gd3
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WOS记录号WOS:000235445300169
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被引频次:7[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/34175
专题中国科学院金属研究所
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H. N. Dong,S. Y. Wu,C. K. Duan. Theoretical calculations of the EPR parameters for Yb3+ ions in YVO4, HfSiO4 and ThSiO4[J]. Journal of Alloys and Compounds,2006,408:750-752.
APA H. N. Dong,S. Y. Wu,&C. K. Duan.(2006).Theoretical calculations of the EPR parameters for Yb3+ ions in YVO4, HfSiO4 and ThSiO4.Journal of Alloys and Compounds,408,750-752.
MLA H. N. Dong,et al."Theoretical calculations of the EPR parameters for Yb3+ ions in YVO4, HfSiO4 and ThSiO4".Journal of Alloys and Compounds 408(2006):750-752.
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