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Preparation of la-doped BiFeO3 thin films with Fe2+ ions on Si substrates
F. Gao; C. Cai; Y. Wang; S. Dong; X. Y. Qiu; G. L. Yuan; Z. G. Liu; J. M. Liu
2006
发表期刊Journal of Applied Physics
ISSN0021-8979
卷号99期号:9
摘要La-doped BiFeO3 thin films with Fe2+ ions have been prepared on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition in order to enhance the ferroelectric and magnetic properties. The targets for the film deposition were synthesized using a rapid liquid phase sintering technique to ensure the low leakage. The dielectric properties at room temperature and above were investigated. It was observed that the La doping greatly enhances the ferroelectric polarization at room temperature by modifying the film structure from rhombohedral to monoclinic. The saturation magnetization was enhanced about two times due to the Fe2+ ions in the thin films. (C) 2006 American Institute of Physics.
部门归属nanjing univ, solid state microstruct lab, nanjing 210093, peoples r china. hong kong polytech univ, dept appl phys, hong kong, hong kong, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china.;liu, jm (reprint author), nanjing univ, solid state microstruct lab, nanjing 210093, peoples r china;liujm@nju.edu.cn
关键词X-ray Room-temperature Polarization Ferroelectrics Transition Crystal Oxides
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WOS记录号WOS:000237682900066
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被引频次:84[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/34209
专题中国科学院金属研究所
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F. Gao,C. Cai,Y. Wang,et al. Preparation of la-doped BiFeO3 thin films with Fe2+ ions on Si substrates[J]. Journal of Applied Physics,2006,99(9).
APA F. Gao.,C. Cai.,Y. Wang.,S. Dong.,X. Y. Qiu.,...&J. M. Liu.(2006).Preparation of la-doped BiFeO3 thin films with Fe2+ ions on Si substrates.Journal of Applied Physics,99(9).
MLA F. Gao,et al."Preparation of la-doped BiFeO3 thin films with Fe2+ ions on Si substrates".Journal of Applied Physics 99.9(2006).
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