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Single-electron transport driven by surface acoustic waves in quasi-one-dimensional channel
H. Z. Guo; X. R. Chen; J. Gao
2006
发表期刊Physics Letters A
ISSN0375-9601
卷号359期号:2页码:157-160
摘要Fourier grid Hamiltonian method is applied to calculate the quantized acoustoelectric current induced by surface acoustic wave (SAW) in a quasi-one-dimensional channel defined in a GaAs-Al(x)Ga(1-x)As heterostructure by split gate. Using simple models for the electrostatic potential barrier and piezoelectric potential, we obtain the first quantized plateau. Moreover, the role of the parameter beta, defined as a ratio of piezoelectric potential amplitude to the effective height of electrostatic potential barrier induced by split gate, is also examined during the calculations of the instantaneous ground state energies and the single-electron tunneling probabilities. The flatness of the plateau is also discussed. (c) 2006 Elsevier B.V. All rights reserved.
部门归属sichuan univ, coll phys sci & technol, chengdu 610064, peoples r china. chinese acad sci, int ctr mat phys, shenyang 610064, peoples r china.;chen, xr (reprint author), sichuan univ, coll phys sci & technol, chengdu 610064, peoples r china;xrchen@126.com
关键词Single-electron Tunneling Electronic Transport Acoustoelectric Effect Saw Quantized Acoustoelectric Current Gas Nonadiabaticity
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WOS记录号WOS:000242140900016
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被引频次:8[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/34221
专题中国科学院金属研究所
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H. Z. Guo,X. R. Chen,J. Gao. Single-electron transport driven by surface acoustic waves in quasi-one-dimensional channel[J]. Physics Letters A,2006,359(2):157-160.
APA H. Z. Guo,X. R. Chen,&J. Gao.(2006).Single-electron transport driven by surface acoustic waves in quasi-one-dimensional channel.Physics Letters A,359(2),157-160.
MLA H. Z. Guo,et al."Single-electron transport driven by surface acoustic waves in quasi-one-dimensional channel".Physics Letters A 359.2(2006):157-160.
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