Arc-discharge synthesis and microstructure characterization of AlN nanowires

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	Arc-discharge synthesis and microstructure characterization of AlN nanowires
	Z. J. Li; Z. Q. Shen; F. Wang; L. L. He
	2006
发表期刊	Journal of Materials Science & Technology
ISSN	1005-0302
卷号	22 期号:1 页码:113-116
摘要	AIN nanowires with a hexagonal structure were synthesized using an improved arc-discharge method and their microstructures were characterized using a high-resolution transmission electron microscope. The synthesized AIN nanowires were of various shapes. Their diameters ranged from 20 to 110 nm and the lengths were up to 20 mu m. Most of the AIN nanowires were coated by an amorphous layer of aluminum oxide. Fabrication yield was about several grams. The growth mechanism was considered to be a vapor-liquid-solid process and an Al droplet formed on the top of as-grown AIN nanowire played a role of catalyst.
部门归属	chinese acad sci, shenyang natl lab mat sci, met res inst, shenyang 110016, peoples r china. shenyang univ technol, lab ultra fine particle, shenyang 110023, peoples r china. northeastern univ, sch met & mat, shenyang 110004, peoples r china.;he, ll (reprint author), chinese acad sci, shenyang natl lab mat sci, met res inst, shenyang 110016, peoples r china;llhe@imr.ac.cn
关键词	Arc-discharge Nanowire High-resolution Transmission Electron Microscope (Hrtem) Field-emission Growth Nanorods
URL	查看原文
WOS记录号	WOS:000235151200018
引用统计	被引频次：9[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/34321
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	Z. J. Li,Z. Q. Shen,F. Wang,et al. Arc-discharge synthesis and microstructure characterization of AlN nanowires[J]. Journal of Materials Science & Technology,2006,22(1):113-116.
APA	Z. J. Li,Z. Q. Shen,F. Wang,&L. L. He.(2006).Arc-discharge synthesis and microstructure characterization of AlN nanowires.Journal of Materials Science & Technology,22(1),113-116.
MLA	Z. J. Li,et al."Arc-discharge synthesis and microstructure characterization of AlN nanowires".Journal of Materials Science & Technology 22.1(2006):113-116.