Ge nano-layer fabricated by high-fluence low-energy ion implantation

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	Ge nano-layer fabricated by high-fluence low-energy ion implantation
	T. C. Lu; S. B. Dun; Q. Hu; S. B. Zhang; Z. An; Y. M. Duan; S. Zhu; Q. M. Wei; L. M. Wang
	2006
发表期刊	Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms
ISSN	0168-583X
卷号	250 页码:183-187
摘要	A Ge nano-layer embedded in the surface layer of an amorphous SiO2 film was fabricated by high-fluence low-energy ion implantation. The component, phase, nano-structure and luminescence properties of the nano-layer were studied by means of Rutherford backscattering, glancing incident X-ray diffraction, laser Raman scattering, transmission electron microscopy and photoluminescence. The relation between nano-particle characteristics and ion fluence was also studied. The results indicate that nano-crystalline Ge and nano-amorphous Ge particles coexist in the nano-layer and the ratio of nano-crystalline Ge to nano-particle Ge increases with increasing ion fluence. The intensity of photoluminescence from the nano-layer increases with increasing ion fluence also. Prepared with certain ion fluences, high-density nano-layers composed of uniform-sized nano-particles can be observed. (c) 2006 Elsevier B.V. All rights reserved.
部门归属	sichuan univ, minist educ, key lab radiat phys & technol, dept phys, chengdu 610064, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110015, peoples r china. sichuan univ, inst nucl sci & technol, minist educ, keylab radiat phys & technol, chengdu 610064, peoples r china. univ michigan, dept nucl engn & radiol sci, ann arbor, mi 48109 usa.;lu, tc (reprint author), sichuan univ, minist educ, key lab radiat phys & technol, dept phys, chengdu 610064, peoples r china;lutiecheng@vip.sina.com
关键词	Ge Nano-layer Ion implantatIon Laser Raman Scattering Photoluminescence Transmission Electron Microscopy X-ray Diffraction Sio2 Film Nanocrystals Photoluminescence Sio2-films Emission Si1-xgex Matrix Growth Silica Blue
URL	查看原文
WOS记录号	WOS:000239883500036
引用统计	被引频次：3[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/34386
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	T. C. Lu,S. B. Dun,Q. Hu,et al. Ge nano-layer fabricated by high-fluence low-energy ion implantation[J]. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms,2006,250:183-187.
APA	T. C. Lu.,S. B. Dun.,Q. Hu.,S. B. Zhang.,Z. An.,...&L. M. Wang.(2006).Ge nano-layer fabricated by high-fluence low-energy ion implantation.Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms,250,183-187.
MLA	T. C. Lu,et al."Ge nano-layer fabricated by high-fluence low-energy ion implantation".Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms 250(2006):183-187.