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Phase separation enhanced interfacial reactions in complex high-k dielectric films
X. Y. Qiu; F. Gao; H. W. Liu; J. S. Zhu; J. M. Liu
2006
发表期刊Integrated Ferroelectrics
ISSN1058-4587
卷号86页码:13-19
摘要Amorphous CaZrOx, ZrAlxSiyOz and HfAlOx complex high-k dielectric films are deposited by pulsed laser deposition, and their microstructural characteristics and interfacial reactions between deposited films and Si substrates during high temperature annealing processes are investigated by X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. An essential finding is that nano-scale phase separation appears to be a common phenomenon for these amorphous films. The nonstoichiometric ZrOx or HfOx clusters precipitating from the amorphous matrix either react with silicon on the interface to form silicate or silicide interfacial layer, or nucleate and grow into nanosized crystals embedded in the outer layer of the dielectric films, which degrades the electrical performances of films.
部门归属nanjing univ, nanjing natl lab microstruct, nanjing 210093, peoples r china. sw univ, inst phys, chongqing 400715, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china.;liu, jm (reprint author), nanjing univ, nanjing natl lab microstruct, nanjing 210093, peoples r china;liujm@nju.edu.cn
关键词Phase Separation Interfacial Reaction High-k Dielectric Film Pulsed-laser Deposition Silicate Thin-films Thermal-stability Gate Property Hfo2
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WOS记录号WOS:000243080600003
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被引频次:1[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/34430
专题中国科学院金属研究所
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X. Y. Qiu,F. Gao,H. W. Liu,et al. Phase separation enhanced interfacial reactions in complex high-k dielectric films[J]. Integrated Ferroelectrics,2006,86:13-19.
APA X. Y. Qiu,F. Gao,H. W. Liu,J. S. Zhu,&J. M. Liu.(2006).Phase separation enhanced interfacial reactions in complex high-k dielectric films.Integrated Ferroelectrics,86,13-19.
MLA X. Y. Qiu,et al."Phase separation enhanced interfacial reactions in complex high-k dielectric films".Integrated Ferroelectrics 86(2006):13-19.
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