| Phase separation and interfacial reaction of high-k HfAlOx films prepared by pulsed-laser deposition in oxygen-deficient ambient; Phase separation and interfacial reaction of high-k HfAlOx films prepared by pulsed-laser deposition in oxygen-deficient ambient | |
| X. Y. Qiu; H. W. Liu; F. Fang; M. J. Ha; J. M. Liu | |
| 2006 ; 2006 | |
| Source Publication | Applied Physics Letters
 ; Applied Physics Letters
|
| ISSN | 0003-6951 ; 0003-6951 |
| Volume | 88Issue:7 |
| Abstract | Ultrathin high-k HfAlOx films on silicon wafers are prepared by pulsed-laser deposition in oxygen-defective ambient. The precipitation of HfOx clusters from HfAlOx matrix is revealed by x-ray photoelectron spectroscopy. It is argued that the HfOx clusters react with silicon to form Hf-silicide interfacial layer at a temperature as low as 600 degrees C, which evolves into Hf-silicate in the subsequent postannealing at 700 degrees C for 30 s in oxygen ambient. The optimized fabrication conditions developed to avoid the formation of interfacial layer is employed to prepare high-quality HfAlOx films of excellent electrical characteristics, such as a dielectric constant of 17.7, a small equivalent oxide thickness of 0.66 nm, a flatband voltage of 0.45 V, and a low leakage current density of 53.8 mA/cm(2) at 1 V gate voltage.; Ultrathin high-k HfAlOx films on silicon wafers are prepared by pulsed-laser deposition in oxygen-defective ambient. The precipitation of HfOx clusters from HfAlOx matrix is revealed by x-ray photoelectron spectroscopy. It is argued that the HfOx clusters react with silicon to form Hf-silicide interfacial layer at a temperature as low as 600 degrees C, which evolves into Hf-silicate in the subsequent postannealing at 700 degrees C for 30 s in oxygen ambient. The optimized fabrication conditions developed to avoid the formation of interfacial layer is employed to prepare high-quality HfAlOx films of excellent electrical characteristics, such as a dielectric constant of 17.7, a small equivalent oxide thickness of 0.66 nm, a flatband voltage of 0.45 V, and a low leakage current density of 53.8 mA/cm(2) at 1 V gate voltage. |
| description.department | nanjing univ, nanjing natl lab microstruct, nanjing 210093, peoples r china. sw univ, inst phys, chongqing 400715, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china.;liu, jm (reprint author), nanjing univ, nanjing natl lab microstruct, nanjing 210093, peoples r china;liujm@nju.edu.cn ; nanjing univ, nanjing natl lab microstruct, nanjing 210093, peoples r china. sw univ, inst phys, chongqing 400715, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china.;liu, jm (reprint author), nanjing univ, nanjing natl lab microstruct, nanjing 210093, peoples r china;liujm@nju.edu.cn |
| Keyword | Silicate Thin-films Silicate Thin-films Thermal-stability Thermal-stability Gate Dielectrics Gate Dielectrics Si(100) Si(100) Zro2 Zro2 Capacitors Capacitors Diffusion Diffusion Kinetics Kinetics Oxides Oxides Hfo2 Hfo2 |
| URL | 查看原文 ; 查看原文 |
| WOS ID | WOS:000235393700070 ; WOS:000235393700070 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/34431 |
| Collection | 中国科学院金属研究所 |
| Recommended Citation GB/T 7714 | X. Y. Qiu,H. W. Liu,F. Fang,et al. Phase separation and interfacial reaction of high-k HfAlOx films prepared by pulsed-laser deposition in oxygen-deficient ambient, Phase separation and interfacial reaction of high-k HfAlOx films prepared by pulsed-laser deposition in oxygen-deficient ambient[J]. Applied Physics Letters, Applied Physics Letters,2006, 2006,88, 88(7). |
| APA | X. Y. Qiu,H. W. Liu,F. Fang,M. J. Ha,&J. M. Liu.(2006).Phase separation and interfacial reaction of high-k HfAlOx films prepared by pulsed-laser deposition in oxygen-deficient ambient.Applied Physics Letters,88(7). |
| MLA | X. Y. Qiu,et al."Phase separation and interfacial reaction of high-k HfAlOx films prepared by pulsed-laser deposition in oxygen-deficient ambient".Applied Physics Letters 88.7(2006). |
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