Room-temperature weak ferromagnetism of amorphous HfAlOx thin films deposited by pulsed laser deposition

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	Room-temperature weak ferromagnetism of amorphous HfAlOx thin films deposited by pulsed laser deposition
	X. Y. Qiu; Q. M. Liu; F. Gao; L. Y. Lu; J. M. Liu
	2006
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	89 期号:24
摘要	The room-temperature weak ferromagnetism of amorphous HfAlOx thin films deposited by pulsed laser deposition on various substrates in oxygen-defective ambient is demonstrated. The magnetization is independent of film thickness, but depends on substrates and deposition temperatures. A magnetic moment of similar to 0.26 mu(B) per HfAlOx f.u. is recorded for HfAlOx films deposited under optimized conditions [deposited at 600 degrees C on (001) sapphire in high vacuum]. It is argued that interfacial defects are one of the possible sources of the weak ferromagnetism. (c) 2006 American Institute of Physics.
部门归属	nanjing univ, solid state microstruct lab, nanjing 210093, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china.;liu, jm (reprint author), nanjing univ, solid state microstruct lab, nanjing 210093, peoples r china;liujm@nju.edu.cn
关键词	Thermal-stability Hfo2 Magnetism Semiconductors Oxides Cab6
URL	查看原文
WOS记录号	WOS:000242886500078
引用统计	被引频次：9[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/34433
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	X. Y. Qiu,Q. M. Liu,F. Gao,et al. Room-temperature weak ferromagnetism of amorphous HfAlOx thin films deposited by pulsed laser deposition[J]. Applied Physics Letters,2006,89(24).
APA	X. Y. Qiu,Q. M. Liu,F. Gao,L. Y. Lu,&J. M. Liu.(2006).Room-temperature weak ferromagnetism of amorphous HfAlOx thin films deposited by pulsed laser deposition.Applied Physics Letters,89(24).
MLA	X. Y. Qiu,et al."Room-temperature weak ferromagnetism of amorphous HfAlOx thin films deposited by pulsed laser deposition".Applied Physics Letters 89.24(2006).