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Enhanced fatigue-endurance of ferroelectric Pb1-xSrx(Zr0.52Ti0.48)O-3 thin films prepared by sol-gel method
Y. Wang; Q. Y. Shao; J. M. Liu
2006
发表期刊Applied Physics Letters
ISSN0003-6951
卷号88期号:12
摘要The polarization fatigue behaviors of ferroelectric Pb1-xSrx(Zr0.52Ti0.48)O-3 (PSZT) thin films deposited on Pt-coated silicon wafers are investigated. Significantly enhanced fatigue endurance with increasing Sr doping and decreasing temperature is observed, and the almost fatigue-free performance up to 10(10) switching cycles for PSZT (x=0.2) thin films at room temperature is identified. The dc-conductivity measurements suggest almost 20 times decreasing of the oxygen vacancy density as the Sr doping increases from x=0 to x=0.2. It is believed that the Sr-doping enhances the stability of oxygen ions and suppresses oxygen vacancies, consequently resulting in the improved fatigue endurance. (c) 2006 American Institute of Physics.
部门归属hong kong polytech univ, dept appl phys, hong kong, hong kong, peoples r china. nanjing univ, nanjing natl lab microstruct, nanjing 210093, peoples r china. chinese acad sci, int ctr mat phys, shenyang, peoples r china.;liu, jm (reprint author), hong kong polytech univ, dept appl phys, hong kong, hong kong, peoples r china;liujm@nju.edu.cn
关键词Polarization Fatigue Capacitors Memories Srbi2ta2o9 Electrodes Bi4ti3o12 Scenarios Titanate
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WOS记录号WOS:000236250100090
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被引频次:36[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/34534
专题中国科学院金属研究所
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Y. Wang,Q. Y. Shao,J. M. Liu. Enhanced fatigue-endurance of ferroelectric Pb1-xSrx(Zr0.52Ti0.48)O-3 thin films prepared by sol-gel method[J]. Applied Physics Letters,2006,88(12).
APA Y. Wang,Q. Y. Shao,&J. M. Liu.(2006).Enhanced fatigue-endurance of ferroelectric Pb1-xSrx(Zr0.52Ti0.48)O-3 thin films prepared by sol-gel method.Applied Physics Letters,88(12).
MLA Y. Wang,et al."Enhanced fatigue-endurance of ferroelectric Pb1-xSrx(Zr0.52Ti0.48)O-3 thin films prepared by sol-gel method".Applied Physics Letters 88.12(2006).
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