| Temperature-dependent fatigue behaviors of ferroelectric Bi4-xLaxTi3O12 thin films |
| Y. Wang; C. Zhu; X. M. Wu; J. M. Liu
|
| 2006
|
| 发表期刊 | Integrated Ferroelectrics
 |
| ISSN | 1058-4587
|
| 卷号 | 79页码:37-45 |
| 摘要 | Temperature-dependent ferroelectric fatigue behaviors of layered-perovskite thin films Bi4-xLaxTi3O12 (BLTx), prepared by sol-gel method, were studied in this paper. Well-saturated hysteresis loops were observed for all samples. The switching fatigue testing at room temperature demonstrates that the fatigue resistance performance can be improved with increasing La-doping content from 0.25 to 0.75, which is attributed to the enhanced activation energy for diffusion of oxygen vacancies. The fatigue experiments close to room temperature and at low temperature indicate that the fatigue behaviors over the two temperature ranges are dominated by oxygen vacancies and space charges, respectively. The temperature point separating the two ranges is about 220 K and 240 K for BLT0.75 and BLT1.0 thin films, respectively. |
| 部门归属 | nanjing univ, solid state microstruct lab, nanjing 210093, peoples r china. chinese acad sci, int ctr mat phys, shenyang, peoples r china.;liu, jm (reprint author), nanjing univ, solid state microstruct lab, nanjing 210093, peoples r china;liujm@nju.edu.cn
|
| 关键词 | Ferroelectrics
Fatigue
Bltx Thin Film
Substituted Bismuth Titanate
Electrical-properties
Srbi2ta2o9
Memories
Bi4ti3o12
Ceramics
Model
Layer
|
| URL | 查看原文
|
| WOS记录号 | WOS:000238615700005
|
| 引用统计 |
|
| 文献类型 | 期刊论文
|
| 条目标识符 | http://ir.imr.ac.cn/handle/321006/34538
|
| 专题 | 中国科学院金属研究所
|
推荐引用方式
GB/T 7714 |
Y. Wang,C. Zhu,X. M. Wu,et al. Temperature-dependent fatigue behaviors of ferroelectric Bi4-xLaxTi3O12 thin films[J]. Integrated Ferroelectrics,2006,79:37-45.
|
| APA |
Y. Wang,C. Zhu,X. M. Wu,&J. M. Liu.(2006).Temperature-dependent fatigue behaviors of ferroelectric Bi4-xLaxTi3O12 thin films.Integrated Ferroelectrics,79,37-45.
|
| MLA |
Y. Wang,et al."Temperature-dependent fatigue behaviors of ferroelectric Bi4-xLaxTi3O12 thin films".Integrated Ferroelectrics 79(2006):37-45.
|
修改评论