Adsorption and diffusion of a Ba adatom on a reconstructed Si(001) surface were studied using first principles density functional calculation. It was found that the lowest energetic configuration is that the Ba atom resides at the T3' (which is displaced along the [(1) over bar 10] direction from the T3 site by similar to 0.26 angstrom). An anisotropic diffusivity of Ba on the reconstructed surface was found. The preferred direction of diffusion was the trough between Si dimer rows.
部门归属
univ elect sci & technol china, dept appl phys, chengdu 610054, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110015, peoples r china.;zu, xt (reprint author), univ elect sci & technol china, dept appl phys, chengdu 610054, peoples r china;xiaotaozu@yahoo.com
Z. G. Wang,X. T. Zu. First principles calculations of adsorption and diffusion of Ba on a reconstructed Si(001) surface[J]. Surface Review and Letters,2006,13(4):365-368.
APA
Z. G. Wang,&X. T. Zu.(2006).First principles calculations of adsorption and diffusion of Ba on a reconstructed Si(001) surface.Surface Review and Letters,13(4),365-368.
MLA
Z. G. Wang,et al."First principles calculations of adsorption and diffusion of Ba on a reconstructed Si(001) surface".Surface Review and Letters 13.4(2006):365-368.
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