Effects of resistivity of a p-Si chip on the light-emitting efficiency of a top-emission organic light-emitting diode with the p-Si chip as the anode

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	Effects of resistivity of a p-Si chip on the light-emitting efficiency of a top-emission organic light-emitting diode with the p-Si chip as the anode
	A. G. Xu; G. Z. Ran; Z. L. Wu; G. L. Ma; Y. P. Qiao; Y. H. Xu; B. R. Yang; B. R. Zhang; G. G. Qin
	2006
发表期刊	Physica Status Solidi a-Applications and Materials Science
ISSN	0031-8965
卷号	203 期号:2 页码:428-434
摘要	For the top-emission organic light-emitting diode (TOLED) with a structure of p-Si/SiOx/N,N'-bis-(1-naphthl)-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB)/tris-(8-hydroxyquinoline) aluminum (AlQ)/Sm/Au, we found the resistivity of the p-Si anode has a great effect on the hole injection and hence on the light-emitting efficiency. Among the p-Si anode TOLEDs each having a resistivity of 10(-3), 10(-1), 1, 10, 20, 40, and 70 92 cm, the light-emitting power efficiency is highest for the one with a 40 92 cm p-Si anode. The existence of an optimum resistivity for the p-Si anode is mainly due to the near balance of hole injection with electron injection. When the p-Si resistivity and the device voltage are high enough, the hole-injection ability of the p-Si anode becomes weaker than that of an indium-tin oxide anode. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
部门归属	peking univ, sch phys, state key lab mesoscop phys, beijing 100871, peoples r china. beijing normal univ, dept phys, analyst & testing ctr, beijing 100875, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china.;ran, gz (reprint author), peking univ, sch phys, state key lab mesoscop phys, beijing 100871, peoples r china;rangz@pku.edu.cn qingg@pku.edu.cn
关键词	1.5 Mu-m Silicon Anode Thin-films Devices Cathode Wavelength Electrode Bilayer Layer
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WOS记录号	WOS:000235493900028
引用统计	被引频次：2[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/34619
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	A. G. Xu,G. Z. Ran,Z. L. Wu,et al. Effects of resistivity of a p-Si chip on the light-emitting efficiency of a top-emission organic light-emitting diode with the p-Si chip as the anode[J]. Physica Status Solidi a-Applications and Materials Science,2006,203(2):428-434.
APA	A. G. Xu.,G. Z. Ran.,Z. L. Wu.,G. L. Ma.,Y. P. Qiao.,...&G. G. Qin.(2006).Effects of resistivity of a p-Si chip on the light-emitting efficiency of a top-emission organic light-emitting diode with the p-Si chip as the anode.Physica Status Solidi a-Applications and Materials Science,203(2),428-434.
MLA	A. G. Xu,et al."Effects of resistivity of a p-Si chip on the light-emitting efficiency of a top-emission organic light-emitting diode with the p-Si chip as the anode".Physica Status Solidi a-Applications and Materials Science 203.2(2006):428-434.