| Effects of low doping concentration on interconnected microstructural ZnO : Al thin films prepared by the sol-gel technique | |
| S. W. Xue; X. T. Zu; X. Xiang; H. Deng; Z. Q. Xu | |
| 2006 | |
| Source Publication | European Physical Journal-Applied Physics
 |
| ISSN | 1286-0042 |
| Volume | 35Issue:3Pages:195-200 |
| Abstract | Interconnected microstructural ZnO: Al thin films with low doping concentration (Al/Zn <= 1%) were deposited on ( 0001) sapphire substrates by the sol-gel technique. The effects of low doping concentration on the structural, optical and electrical properties of the films were investigated. Scanning electron microscope (SEM), X-ray diffraction (XRD), photoluminescence (PL), and four-point probe method were used to characterize the structural, optical and electrical properties. We found that with increasing the dopant concentration the interconnected thread becomes thinner, the ( 002) diffraction peak and the near band edge (NBE) emission are enhanced while the deep level emission (DLE) and the resistivity are decreased. |
| description.department | univ elect sci & technol china, dept appl phys, chengdu 610054, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110015, peoples r china. univ elect sci & technol china, sch microelect & solid state elect, chengdu 610054, peoples r china. zhanjiang normal coll, dept phys, zhanjiang 524048, peoples r china.;zu, xt (reprint author), univ elect sci & technol china, dept appl phys, chengdu 610054, peoples r china;xiaotaozu@yahoo.com |
| Keyword | Chemical-vapor-deposition Pulsed-laser Deposition Native Point-defects Zinc-oxide Films Electrical-properties Optical-properties Spray-pyrolysis Transparent Orientation Origin |
| URL | 查看原文 |
| WOS ID | WOS:000240239600009 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/34630 |
| Collection | 中国科学院金属研究所 |
| Recommended Citation GB/T 7714 | S. W. Xue,X. T. Zu,X. Xiang,et al. Effects of low doping concentration on interconnected microstructural ZnO : Al thin films prepared by the sol-gel technique[J]. European Physical Journal-Applied Physics,2006,35(3):195-200. |
| APA | S. W. Xue,X. T. Zu,X. Xiang,H. Deng,&Z. Q. Xu.(2006).Effects of low doping concentration on interconnected microstructural ZnO : Al thin films prepared by the sol-gel technique.European Physical Journal-Applied Physics,35(3),195-200. |
| MLA | S. W. Xue,et al."Effects of low doping concentration on interconnected microstructural ZnO : Al thin films prepared by the sol-gel technique".European Physical Journal-Applied Physics 35.3(2006):195-200. |
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