Effects of annealing and dopant concentration on the optical characteristics of ZnO : Al thin films by sol-gel technique

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	Effects of annealing and dopant concentration on the optical characteristics of ZnO : Al thin films by sol-gel technique
	S. W. Xue; X. T. Zu; W. G. Zheng; M. Y. Chen; X. Xiang
	2006
发表期刊	Physica B-Condensed Matter
ISSN	0921-4526
卷号	382 期号:1-2 页码:201-204
摘要	ZnO:Al thin films doped with different aluminum concentrations were deposited on (0001) sapphire substrates by the sol-gel technique. Thermal annealing of ZnO:Al films was carried out in an argon ambient at various annealing temperatures from 600 to 950 degrees C. The effects of thermal annealing and dopant concentration on the optical properties of ZnO:Al thin films were investigated. It is found that near band edge UV emission is enhanced by increasing the annealing temperature and dopant concentration. But defect-related deep-level emission decreases with the increasing dopant concentration and thermal annealing has little influence as the deep-level emission. The optical band gap of ZnO:Al films increases from 3.21 to 3.25 eV on increasing the dopant concentration from 0.01% to 1%. The optical transmittance decreases in the visible region, while it increases in the ultraviolet region with an increase in the annealing temperature. (c) 2006 Elsevier B.V. All rights reserved.
部门归属	univ elect sci & technol china, dept appl phys, chengdu 610054, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110015, peoples r china. zhanjiang normal coll, dept phys, zhanjiang 524048, peoples r china. chinese acad engn phys, laser fus res ctr, mianyang 621900, peoples r china.;zu, xt (reprint author), univ elect sci & technol china, dept phys, chengdu 610054, peoples r china;xiaotaozu@yahoo.com
关键词	Zno Thin Films Pl Sol-gel Annealing Absorption Spectra Transmittance Oxide-films Photoluminescence Green Enhancement Ultraviolet Substrate Emissions Oxidation Si
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WOS记录号	WOS:000238780100032
引用统计	被引频次：64[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/34631
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	S. W. Xue,X. T. Zu,W. G. Zheng,et al. Effects of annealing and dopant concentration on the optical characteristics of ZnO : Al thin films by sol-gel technique[J]. Physica B-Condensed Matter,2006,382(1-2):201-204.
APA	S. W. Xue,X. T. Zu,W. G. Zheng,M. Y. Chen,&X. Xiang.(2006).Effects of annealing and dopant concentration on the optical characteristics of ZnO : Al thin films by sol-gel technique.Physica B-Condensed Matter,382(1-2),201-204.
MLA	S. W. Xue,et al."Effects of annealing and dopant concentration on the optical characteristics of ZnO : Al thin films by sol-gel technique".Physica B-Condensed Matter 382.1-2(2006):201-204.