Laser-induced thermoelectric voltage in normal state MgB2 thin films | |
S. Q. Zhao; Y. L. Zhou; K. Zhao; S. F. Wang; Z. H. Chen; K. J. Jin; H. B. Lu; B. L. Cheng; G. Z. Yang | |
2006 | |
发表期刊 | Applied Surface Science
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ISSN | 0169-4332 |
卷号 | 253期号:5页码:2671-2673 |
摘要 | Laser-induced voltage has been observed in c-axis oriented MgB2 thin film at room temperature. The amplitude of the signal is approximately proportional to the film thickness. For the film with the thickness of 150 nm, a very fast response has been detected when the film was irradiated by a 308 nm pulsed laser of 20 ns duration. The rise time and full width at half-maximum of the signal are about 3 and 25 ns, respectively. The physical origin of the laser-induced voltage can be attributed to a transverse thermoelectricity due to the anisotropic thermopower in MgB2. (c) 2006 Elsevier B.V. All rights reserved. |
部门归属 | chinese acad sci, inst phys, beijing natl lab condensed matter phys, beijing 100080, peoples r china. china univ petr, dept math & phys, beijing 102249, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china.;zhou, yl (reprint author), chinese acad sci, inst phys, beijing natl lab condensed matter phys, beijing 100080, peoples r china;ylzhou@aphy.iphy.ac.cn ainiphoto@163.com |
关键词 | Mgb2 Thin Films Laser-induced Voltage Thermoelectric Effect Room-temperature |
URL | 查看原文 |
WOS记录号 | WOS:000243244300050 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/34742 |
专题 | 中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | S. Q. Zhao,Y. L. Zhou,K. Zhao,et al. Laser-induced thermoelectric voltage in normal state MgB2 thin films[J]. Applied Surface Science,2006,253(5):2671-2673. |
APA | S. Q. Zhao.,Y. L. Zhou.,K. Zhao.,S. F. Wang.,Z. H. Chen.,...&G. Z. Yang.(2006).Laser-induced thermoelectric voltage in normal state MgB2 thin films.Applied Surface Science,253(5),2671-2673. |
MLA | S. Q. Zhao,et al."Laser-induced thermoelectric voltage in normal state MgB2 thin films".Applied Surface Science 253.5(2006):2671-2673. |
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