Investigations of the EPR parameters and substitutional sites of Ni3+ ions in CuGaS2 and AgGaS2 ternary semiconductors

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	Investigations of the EPR parameters and substitutional sites of Ni3+ ions in CuGaS2 and AgGaS2 ternary semiconductors
	W. C. Zheng; X. X. Wu; Z. Qing; H. Lv
	2006
发表期刊	Materials Science and Engineering B-Solid State Materials for Advanced Technology
ISSN	0921-5107
卷号	130 期号:1-3 页码:273-276
摘要	The electronic paramagnetic resonance (EPR) parameters (g factors g(parallel to), g(perpendicular to) and zero-field splitting D) of Ni3+ ions at both M+ (M = Cu, Ag) and Ga3+ sites in MGaS2 ternary semiconductors are calculated from the high-order perturbation formulas based on the two spin-orbit (SO) coupling parameter model for 3d(7) ions in tetragonal symmetry. The calculated results suggest that Ni3+ ions replace the monovalent M+ ions in MGaS2 crystals. This point is contrary to the previous assumption that Ni3+ ions substitute for the isovalent Ga3+ ions to attain the charge neutrality. The reasonableness of the suggestion is discussed. (c) 2006 Elsevier B.V. All rights reserved.
部门归属	sichuan univ, dept mat sci, chengdu 610064, peoples r china. civil aviat flying inst china, dept phys, guanghan 618307, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china. fudan univ, natl key lab, surface phys lab, shanghai 200433, peoples r china.;zheng, wc (reprint author), sichuan univ, dept mat sci, chengdu 610064, peoples r china;zhengwc1@163.com
关键词	Defect Formation Electron Paramagnetic Resonance Nickel Crystal-field Theory Semiconductors Electron-paramagnetic-resonance Atomic Screening Constants Co2++ Ions Chalcopyrite Semiconductors Ib-iii-vi2 Semiconductors Optical-absorption Single-crystals Scf Functions Cuals2 Esr
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WOS记录号	WOS:000238603400043
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/34759
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	W. C. Zheng,X. X. Wu,Z. Qing,et al. Investigations of the EPR parameters and substitutional sites of Ni3+ ions in CuGaS2 and AgGaS2 ternary semiconductors[J]. Materials Science and Engineering B-Solid State Materials for Advanced Technology,2006,130(1-3):273-276.
APA	W. C. Zheng,X. X. Wu,Z. Qing,&H. Lv.(2006).Investigations of the EPR parameters and substitutional sites of Ni3+ ions in CuGaS2 and AgGaS2 ternary semiconductors.Materials Science and Engineering B-Solid State Materials for Advanced Technology,130(1-3),273-276.
MLA	W. C. Zheng,et al."Investigations of the EPR parameters and substitutional sites of Ni3+ ions in CuGaS2 and AgGaS2 ternary semiconductors".Materials Science and Engineering B-Solid State Materials for Advanced Technology 130.1-3(2006):273-276.