An interface kinetics study of oxidation process of silicon

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	An interface kinetics study of oxidation process of silicon
	F. Fang; M. J. Ha; X. Y. Qiu; J. M. Liu
	2005
发表期刊	Integrated Ferroelectrics
ISSN	1058-4587
卷号	74 页码:31-43
摘要	As well demonstrated in the Deal-Grove general model for thermal oxidation kinetics of silicon, a deviation from experiments on short-time oxidation regime is existed. Further study on the interface configuration and growth kinetics of oxidation process of silicon is performed. Various isotopic labeling experiments allow us to argue that this region of an "anomalously high rate near Si-SiO 2 interface represents a transition region between Si and fully oxidized SiO 2 layer, which may be viewed as an incompletely oxidized layer. We accordingly present a phenomenological improved Deal-Grove model. The calculated results fit much better than the Deal-Grove model prediction with the measured oxidation thickness for both dry- and wet-oxidation experiments.
部门归属	nanjing univ, nanjing natl lab microstruct, nanjing 210093, peoples r china. chinese acad sci, int ctr mat phys, shenyang, peoples r china.;liu, jm (reprint author), nanjing univ, nanjing natl lab microstruct, nanjing 210093, peoples r china;liujm@nju.edu.cn
关键词	Oxidation Kinetics Transition Region Modeling Thermal-oxidation Oxide-films Si(100) Oxygen Mechanism Growth Sio2
URL	查看原文
WOS记录号	WOS:000234231700005
引用统计	被引频次：1[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/34840
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	F. Fang,M. J. Ha,X. Y. Qiu,et al. An interface kinetics study of oxidation process of silicon[J]. Integrated Ferroelectrics,2005,74:31-43.
APA	F. Fang,M. J. Ha,X. Y. Qiu,&J. M. Liu.(2005).An interface kinetics study of oxidation process of silicon.Integrated Ferroelectrics,74,31-43.
MLA	F. Fang,et al."An interface kinetics study of oxidation process of silicon".Integrated Ferroelectrics 74(2005):31-43.