Study on high-temperature performances of 1.3-mu m InGaAsP-InP strained multiquantum-well buried-heterostructure lasers

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	Study on high-temperature performances of 1.3-mu m InGaAsP-InP strained multiquantum-well buried-heterostructure lasers
	J. Y. Jin; J. Shi; D. C. Tian
	2005
发表期刊	Ieee Photonics Technology Letters
ISSN	1041-1135
卷号	17 期号:2 页码:276-278
摘要	Stripe-width and cavity length dependencies of high-temperature performances of 1.3-mum InGaAsP-InP well-designed buried-hetrostructure strained multiquantum-well (MQW) lasers were investigated. The threshold currents, as low as 4.5110.5 mA and slope efficiencies as high as 0.48/0.42 mW/mA at 25 degreesC/85 degreesC were obtained in the MQW lasers with 1.5-mum width, 250-mum length, and 0.3/0.85 facet reflectivity. With temperature increasing from 25 degreesC to 85 degreesC, the MQW lasers exhibited lower output power degradation, the minimum value was 1.78 dB at an operation current of 45 mA. The MQW lasers were suitable for application in optical access networks.
部门归属	wuhan univ, dept phys, wuhan 430072, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china.;jin, jy (reprint author), wuhan univ, dept phys, wuhan 430072, peoples r china;jiny6612@yahoo.com jshi@whu.edu.cn dchtian@whu.edu.cn
关键词	Cavity Length High-temperature Performance Multiquantum-well (Mqw) Output Power Degradation Semiconductor Lasers Stripe Width Efficiency Mode
URL	查看原文
WOS记录号	WOS:000226481700005
引用统计	被引频次：7[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/34887
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	J. Y. Jin,J. Shi,D. C. Tian. Study on high-temperature performances of 1.3-mu m InGaAsP-InP strained multiquantum-well buried-heterostructure lasers[J]. Ieee Photonics Technology Letters,2005,17(2):276-278.
APA	J. Y. Jin,J. Shi,&D. C. Tian.(2005).Study on high-temperature performances of 1.3-mu m InGaAsP-InP strained multiquantum-well buried-heterostructure lasers.Ieee Photonics Technology Letters,17(2),276-278.
MLA	J. Y. Jin,et al."Study on high-temperature performances of 1.3-mu m InGaAsP-InP strained multiquantum-well buried-heterostructure lasers".Ieee Photonics Technology Letters 17.2(2005):276-278.