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Substrate temperature calculation for pulsed bias arc ion plating
G. Q. Lin; X. Bai; C. Dong; W. Lishi; L. H. Wen
2005
发表期刊Surface & Coatings Technology
ISSN0257-8972
卷号194期号:2-3页码:325-329
摘要The main factors influencing substrate temperature such as ion bombardment, heat radiation, and heat conductivity are analyzed for Pulsed-Bias Arc Ion Plating (PBAIP). The wave profile of the pulsed bias voltage, varying from -1000 to 0 V, is basically rectangle. This characteristic periodic energy input has an average energy density being equal to the product of that of the DC Arc Ion Plating (DCAIP) and the duty cycle in PBAIP. A temperature model based on energy conservation for the substrate temperature is thus established, which incorporates input ion power, heat radiation and heat conductivity. Experiments are also conducted to verify the calculation. (c) 2004 Elsevier B.V. All rights reserved.
部门归属dalian univ technol, state key lab mat modificat laser ion & electron, dalian 116024, peoples r china. chinese acad sci, inst met res, shenyang 110016, peoples r china.;dong, c (reprint author), dalian univ technol, state key lab mat modificat laser ion & electron, dalian 116024, peoples r china;dong@dlut.edu.cn
关键词Substrate Temperature Arc Ion Plating Pulsed Bias Tin Deposition Voltage
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WOS记录号WOS:000227812300020
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被引频次:10[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/34923
专题中国科学院金属研究所
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G. Q. Lin,X. Bai,C. Dong,et al. Substrate temperature calculation for pulsed bias arc ion plating[J]. Surface & Coatings Technology,2005,194(2-3):325-329.
APA G. Q. Lin,X. Bai,C. Dong,W. Lishi,&L. H. Wen.(2005).Substrate temperature calculation for pulsed bias arc ion plating.Surface & Coatings Technology,194(2-3),325-329.
MLA G. Q. Lin,et al."Substrate temperature calculation for pulsed bias arc ion plating".Surface & Coatings Technology 194.2-3(2005):325-329.
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