High-performance dual-gate carbon nanotube FETs with 40-nm gate length

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	High-performance dual-gate carbon nanotube FETs with 40-nm gate length
	Y. M. Lin; J. Appenzeller; Z. H. Chen; Z. G. Chen; H. M. Cheng; P. Avouris
	2005
发表期刊	Ieee Electron Device Letters
ISSN	0741-3106
卷号	26 期号:11 页码:823-825
摘要	We report on a high-performance back-gated carbon nanotube field-effect transistor (CNFET) with a peak transconductance of 12.5 mu S and a delay time per unit length of tau/L = 19 ps/mu m. In order to minimize the parasitic capacitances and optimize the performance of scaled CNFETs, we have utilized a dual-gate design and have fabricated a 40-nm-gate CNFET possessing excellent subthreshold and output characteristics without exhibiting short-channel effects.
部门归属	ibm corp, thomas j watson res ctr, yorktown hts, ny 10598 usa. inst met sci & technol, shenyang natl lab mat sci, shenyang 110016, peoples r china.;lin, ym (reprint author), ibm corp, thomas j watson res ctr, yorktown hts, ny 10598 usa;yming@us.ibm.com joerga@us.ibm.com avouris@us.ibm.com
关键词	Carbon Nanotube (Cn) Dual Gate Field-effect Transistor (Fet) Short-channel Effect Field-effect Transistors
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/34924
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	Y. M. Lin,J. Appenzeller,Z. H. Chen,et al. High-performance dual-gate carbon nanotube FETs with 40-nm gate length[J]. Ieee Electron Device Letters,2005,26(11):823-825.
APA	Y. M. Lin,J. Appenzeller,Z. H. Chen,Z. G. Chen,H. M. Cheng,&P. Avouris.(2005).High-performance dual-gate carbon nanotube FETs with 40-nm gate length.Ieee Electron Device Letters,26(11),823-825.
MLA	Y. M. Lin,et al."High-performance dual-gate carbon nanotube FETs with 40-nm gate length".Ieee Electron Device Letters 26.11(2005):823-825.