Oxidation of the single-crystal Ni-base superalloy DD32 containing rhenium in air at 900 and 1000 degrees C | |
C. T. Liu; X. F. Sun; H. R. Guan; Z. Q. Hu | |
2005 | |
发表期刊 | Surface & Coatings Technology
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ISSN | 0257-8972 |
卷号 | 197期号:1页码:39-44 |
摘要 | The oxidation behavior of a single-crystal Ni-base superalloy DD32 was studied in air at 900 and 1000 ° C. The oxide morphology and microstructure were analyzed by X-ray diffraction (XRD), SEM/EDS. The scales formed at 900 and 1000 ° C were complicated, with an outer layer of columnar NiO, an intermediate layer mainly composed of complex oxides and a small amount of spinels, and an inner continuous layer of α-Al2O3. At 900 and 1000 ° C, two oxidation steps appear in the oxidation kinetics. The first one is controlled by NiO growth and the second by Al2O3 growth once a continuous Al2O3 layer formed under the previously grown NiO layer after a critical time. © 2004 Elsevier BY. All rights reserved. |
部门归属 | chinese acad sci, met res inst, state key lab corros & protect, shenyang 110016, peoples r china.;liu, ct (reprint author), chinese acad sci, met res inst, state key lab corros & protect, shenyang 110016, peoples r china;ctliu@imr.ac.cn |
关键词 | Single-crystal (Sc) Superalloy Oxidation Nio Alpha-al2o3 Stress Rupture Behavior Cr-al Alloys Microstructure Coatings |
URL | 查看原文 |
WOS记录号 | WOS:000229513700005 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/34929 |
专题 | 中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | C. T. Liu,X. F. Sun,H. R. Guan,et al. Oxidation of the single-crystal Ni-base superalloy DD32 containing rhenium in air at 900 and 1000 degrees C[J]. Surface & Coatings Technology,2005,197(1):39-44. |
APA | C. T. Liu,X. F. Sun,H. R. Guan,&Z. Q. Hu.(2005).Oxidation of the single-crystal Ni-base superalloy DD32 containing rhenium in air at 900 and 1000 degrees C.Surface & Coatings Technology,197(1),39-44. |
MLA | C. T. Liu,et al."Oxidation of the single-crystal Ni-base superalloy DD32 containing rhenium in air at 900 and 1000 degrees C".Surface & Coatings Technology 197.1(2005):39-44. |
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