Photoluminescence and characteristics of terbium-doped AlN film prepared by magnetron sputtering

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	Photoluminescence and characteristics of terbium-doped AlN film prepared by magnetron sputtering
	F. S. Liu; W. J. Ma; Q. L. Liu; J. K. Liang; J. Luo; L. T. Yang; G. B. Song; Y. Zhang; G. H. Rao
	2005
发表期刊	Applied Surface Science
ISSN	0169-4332
卷号	245 期号:1-4 页码:391-399
摘要	Tb-doped AlN films are prepared by reactive radio frequency (RF) magnetron sputtering under different work conditions. As the RF power increases from 50 to 250 W, the prepared film changes from amorphous to c-axis oriented crystalline. Lower work pressure and higher RF power enhance the deposition rate and crystallinity. The emission from D-5(4) to F-7(J) (J = 6-0) of Tb3+ are observed on all the films. The intensity of PL spectra of crystalline films is obviously stronger than that of the amorphous films. The PL intensity of D-5(4) D-4 to F-7(6) is the strongest for crystalline film, but for amorphous film that of D-5(4) to F-7(5) is the strongest. Time-resolved spectra show that there exist two decay time for D-5(4) to F-7(j) (J = 6,5): one is shorter ranging from 41 to 60 mu s, the other is longer ranging from 202 to 287 mu s. The decay time of amorphous film is slightly longer than that of crystalline films. (c) 2004 Published by Elsevier B.V.
部门归属	chinese acad sci, inst phys, beijing natl lab condensed matter phys, beijing 100080, peoples r china. sw univ sci & technol, sch mat sci & engn, mianyang 621002, peoples r china. acad sinica, int ctr mat phys, shenyang 110016, peoples r china. beijing univ aeronaut & astronaut, beijing 100083, peoples r china.;liu, fs (reprint author), chinese acad sci, inst phys, beijing natl lab condensed matter phys, pob 603, beijing 100080, peoples r china;fsliu@aphy.iphy.ac.cn qlliu@aphy.iphy.ac.cn
关键词	Photoluminescence Tb-doped Aluminum Nitride Film Red-light Emission Thin-films Visible Emission Green Electroluminescence Tb Ions Gan Nitride Er Cathodoluminescence Eu
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WOS记录号	WOS:000228904900052
引用统计	被引频次：10[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/34932
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	F. S. Liu,W. J. Ma,Q. L. Liu,et al. Photoluminescence and characteristics of terbium-doped AlN film prepared by magnetron sputtering[J]. Applied Surface Science,2005,245(1-4):391-399.
APA	F. S. Liu.,W. J. Ma.,Q. L. Liu.,J. K. Liang.,J. Luo.,...&G. H. Rao.(2005).Photoluminescence and characteristics of terbium-doped AlN film prepared by magnetron sputtering.Applied Surface Science,245(1-4),391-399.
MLA	F. S. Liu,et al."Photoluminescence and characteristics of terbium-doped AlN film prepared by magnetron sputtering".Applied Surface Science 245.1-4(2005):391-399.