Pulsed laser deposition of aluminate YAlO3 and LaAlO3 thin films for alternative gate dielectric applications

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	Pulsed laser deposition of aluminate YAlO3 and LaAlO3 thin films for alternative gate dielectric applications
	J. M. Liu; G. H. Shi; L. C. Yu; T. L. Li; Z. G. Liu; J. Y. Dai
	2005
发表期刊	Applied Physics a-Materials Science & Processing
ISSN	0947-8396
卷号	80 期号:8 页码:1775-1779
摘要	Amorphous aluminate YAlO3 (YAO) thin films on n-type silicon wafers as gate dielectric layers of metal - oxide semiconductor devices are prepared by pulsed laser deposition. As a comparison, amorphous aluminate LaAlO3 (LAO) thin films are also prepared. The structural and electrical characterization shows that the as-prepared YAO films remain amorphous until 900 degrees C and the dielectric constant is similar to 14. The measured leakage current of less than 10(-3) A/cm(2) at a bias of V-G = 1.0 V for similar to 40-nm-thick YAO and LAO films obeys the Fowler Nordheim tunneling mechanism. It is revealed that the electrical property can be significantly affected by the oxygen pressure during deposition and post rapid thermal annealing, which may change the fixed negative charge density at the gate interface.
部门归属	nanjing univ, solid state microstruct lab, nanjing 210093, peoples r china. chinese acad sci, int ctr mat phys, shenyang, peoples r china. hong kong polytech univ, dept appl phys, hong kong, hong kong, peoples r china.;liu, jm (reprint author), nanjing univ, solid state microstruct lab, nanjing 210093, peoples r china;liujm@nju.edu.cn
关键词	Hafnium Oxide Si Stability Silicon Transition Dioxide Devices Hfo2
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/34939
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	J. M. Liu,G. H. Shi,L. C. Yu,et al. Pulsed laser deposition of aluminate YAlO3 and LaAlO3 thin films for alternative gate dielectric applications[J]. Applied Physics a-Materials Science & Processing,2005,80(8):1775-1779.
APA	J. M. Liu,G. H. Shi,L. C. Yu,T. L. Li,Z. G. Liu,&J. Y. Dai.(2005).Pulsed laser deposition of aluminate YAlO3 and LaAlO3 thin films for alternative gate dielectric applications.Applied Physics a-Materials Science & Processing,80(8),1775-1779.
MLA	J. M. Liu,et al."Pulsed laser deposition of aluminate YAlO3 and LaAlO3 thin films for alternative gate dielectric applications".Applied Physics a-Materials Science & Processing 80.8(2005):1775-1779.