High sensitivity of positive magnetoresistance in low magnetic field in perovskite oxide p-n junctions

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	High sensitivity of positive magnetoresistance in low magnetic field in perovskite oxide p-n junctions
	H. B. Lu; S. Y. Dai; Z. H. Chen; Y. L. Zhou; B. L. Cheng; K. J. Jin; L. F. Liu; G. Z. Yang; X. L. Ma
	2005
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	86 期号:3
摘要	Large positive magnetoresistance (MR) and high MR sensitivity in low magnetic fields have been discovered in the Sr-doped LaMnO3 and Nb-doped SrTiO3 p-n junctions fabricated by laser molecular-beam epitaxy. The MR ratios, defined as DeltaR/R-0, DeltaR = R-H-R-0, are observed as large as 11 % in 5 Oe, 23 % in 100 Oe, and 26 % in 1000 Oe at 290 K; 53% in 5 Oe, 80 % in 100 Oe, and 94 % in 1000 Oe at 255 K. The MR sensitivities are 85 Omega/Oe at 290 K, 246 Omega/Oe at 255 K, and 136 Omega/Oe at 190 K, respectively, with the applied magnetic field changed from 0 to 5 Oe. The positive MR ratios and high MR sensitivities of the p-n junctions are very different from that of the LaMnO3 compound family. (C) 2005 American Institute of Physics.
部门归属	chinese acad sci, inst phys, beijing natl lab condensed matter phys, beijing 100080, peoples r china. chinese acad sci, met res inst, shenyang natl lab mat sci, shenyang 110016, peoples r china.;lu, hb (reprint author), chinese acad sci, inst phys, beijing natl lab condensed matter phys, beijing 100080, peoples r china;hblu@aphy.iphy.ac.cn
关键词	Molecular-beam Epitaxy Colossal Magnetoresistance Trilayer Junctions Tunnel-junctions Heterostructure Temperature Manganites Electron Srtio3
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/34960
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	H. B. Lu,S. Y. Dai,Z. H. Chen,et al. High sensitivity of positive magnetoresistance in low magnetic field in perovskite oxide p-n junctions[J]. Applied Physics Letters,2005,86(3).
APA	H. B. Lu.,S. Y. Dai.,Z. H. Chen.,Y. L. Zhou.,B. L. Cheng.,...&X. L. Ma.(2005).High sensitivity of positive magnetoresistance in low magnetic field in perovskite oxide p-n junctions.Applied Physics Letters,86(3).
MLA	H. B. Lu,et al."High sensitivity of positive magnetoresistance in low magnetic field in perovskite oxide p-n junctions".Applied Physics Letters 86.3(2005).