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Molecular dynamics studies on vacancy-interstitial annihilation in silicon
Y. H. Qiao; S. Q. Wang
2005
发表期刊Acta Physica Sinica
ISSN1000-3290
卷号54期号:10页码:4827-4835
摘要Molecular dynamics (MD) simulation is performed to study the vacancy-interstitial annihilation in crystalline silicon. We choose the Stillinger-Weber potential, which is commonly used for silicon, to describe the interaction between atoms. The system is relaxed under 300K and 1400K respectively. We have found that < 111 > is the preferred recombination direction and propose the presence of an energy barrier in the < 110 > direction. From the calculated value of energy barrier along < 110 > we give a reasonable explanation for the difference between Tang's and Zawadzki's data.
部门归属chinese acad sci, met res inst, shenyang natl lab mat sci, shenyang 110016, peoples r china.;wang, sq (reprint author), chinese acad sci, met res inst, shenyang natl lab mat sci, shenyang 110016, peoples r china;sqwang@imr.ac.cn
关键词Molecular Dynamics Vacancy And Interstitial Diffusion Point-defects Diffusion Mechanisms
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WOS记录号WOS:000232443100063
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被引频次:7[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/35006
专题中国科学院金属研究所
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Y. H. Qiao,S. Q. Wang. Molecular dynamics studies on vacancy-interstitial annihilation in silicon[J]. Acta Physica Sinica,2005,54(10):4827-4835.
APA Y. H. Qiao,&S. Q. Wang.(2005).Molecular dynamics studies on vacancy-interstitial annihilation in silicon.Acta Physica Sinica,54(10),4827-4835.
MLA Y. H. Qiao,et al."Molecular dynamics studies on vacancy-interstitial annihilation in silicon".Acta Physica Sinica 54.10(2005):4827-4835.
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