Interfacial microstructure of high-kappa dielectric CaZrOx films deposited by pulse laser deposition in low oxygen pressure | |
X. Y. Qiu; H. W. Liu; F. Fang; M. J. Ha; J. M. Liu | |
2005 | |
发表期刊 | Integrated Ferroelectrics
![]() |
ISSN | 1058-4587 |
卷号 | 74页码:103-111 |
摘要 | The interfacial microstructure of CaZrO x films deposited on Si(100) substrate by pulse laser deposition in oxygen-deficient ambient was investigated by high-resolution transmission electron microscopy (HRTEM) and X-ray photon spectroscopy (XPS). The CaZrO x films deposited at 600 degrees C reacted with Si to form a CaZrO x -silicate interfacial layer with kappa greater than or similar to 5.25. Above 700 degrees C, CaZrO x began to separate into ZrO 2 and CaO-rich zirconate. The separated ZrO 2 was crystallized at the surface layer of films, while at the interfacial layer the separated ZrO 2 reacted with Si to form Zr-silicide and Zr-silicate phase, and the volume proportion of Zr-silicide may be higher than Zr-silicate above 700 degrees C. |
部门归属 | nanjing univ, nanjing natl lab microstruct, nanjing 210093, peoples r china. southwest univ, inst phys, chongqing 400715, peoples r china. chinese acad sci, int ctr mat phys, shenyang, peoples r china.;liu, jm (reprint author), nanjing univ, nanjing natl lab microstruct, nanjing 210093, peoples r china;liujm@nju.edu.cn |
关键词 | Calcium Zirconate Interfacial Kinetic Process Microstructure Thermal-stability Gate Dielectrics Zro2 Films Thin-films Silicon Si Diffusion Si(100) Growth Oxides |
URL | 查看原文 |
WOS记录号 | WOS:000234231700013 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/35008 |
专题 | 中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | X. Y. Qiu,H. W. Liu,F. Fang,et al. Interfacial microstructure of high-kappa dielectric CaZrOx films deposited by pulse laser deposition in low oxygen pressure[J]. Integrated Ferroelectrics,2005,74:103-111. |
APA | X. Y. Qiu,H. W. Liu,F. Fang,M. J. Ha,&J. M. Liu.(2005).Interfacial microstructure of high-kappa dielectric CaZrOx films deposited by pulse laser deposition in low oxygen pressure.Integrated Ferroelectrics,74,103-111. |
MLA | X. Y. Qiu,et al."Interfacial microstructure of high-kappa dielectric CaZrOx films deposited by pulse laser deposition in low oxygen pressure".Integrated Ferroelectrics 74(2005):103-111. |
条目包含的文件 | 条目无相关文件。 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论