Thermal stability and dielectric properties of ultrathin CaZrOx films prepared by pulsed laser deposition

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	Thermal stability and dielectric properties of ultrathin CaZrOx films prepared by pulsed laser deposition
	X. Y. Qiu; H. W. Liu; F. Fang; M. J. Ha; X. H. Zhou; J. M. Liu
	2005
发表期刊	Applied Physics a-Materials Science & Processing
ISSN	0947-8396
卷号	81 期号:7 页码:1431-1434
摘要	The thermal stability and dielectric properties of amorphous CaZrOx film prepared by pulsed laser deposition (PLD) have been investigated. X-ray diffraction (XRD) investigation shows that CaZrOx film still remains amorphous after rapid thermal annealing at 700 degrees C for 10 min. Differential thermal analysis (DTA) indicates that the crystallization temperature of CaZrOx film is about 729.53 degrees C, which is significantly higher than that of amorphous ZrO2 films prepared at the similar conditions. High-resolution transmission electron microscopy (HRTEM) and X-ray photon spectroscopy (XPS) analysis reveal there exists a Si-O transition layer between the CaZrOx film and Si substrate. The permittivity of CaZrOx film is about 10.5 ( at 1MHz) by measuring a Pt/CaZrOx/Pt MIM structure. Under the optimized conditions, a small EOT = 0.91 nm and a leakage current density of 125mA/cm(2) at 1 V gate voltage were obtained. The enhanced thermal stability and improved electrical characteristics suggest that the amorphous CaZrOx film may be an attractive gate dielectric alternative for next generation MOS field effect transistor applications.
部门归属	nanjing univ, lab solid state microstruct, nanjing 210093, peoples r china. chinese acad sci, int ctr mat phys, shenyang, peoples r china.;liu, jm (reprint author), nanjing univ, lab solid state microstruct, nanjing 210093, peoples r china;liujm@nju.edu.cn
关键词	Zro2 Films Silicon
URL	查看原文
WOS记录号	WOS:000231796200018
引用统计	被引频次：12[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/35009
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	X. Y. Qiu,H. W. Liu,F. Fang,et al. Thermal stability and dielectric properties of ultrathin CaZrOx films prepared by pulsed laser deposition[J]. Applied Physics a-Materials Science & Processing,2005,81(7):1431-1434.
APA	X. Y. Qiu,H. W. Liu,F. Fang,M. J. Ha,X. H. Zhou,&J. M. Liu.(2005).Thermal stability and dielectric properties of ultrathin CaZrOx films prepared by pulsed laser deposition.Applied Physics a-Materials Science & Processing,81(7),1431-1434.
MLA	X. Y. Qiu,et al."Thermal stability and dielectric properties of ultrathin CaZrOx films prepared by pulsed laser deposition".Applied Physics a-Materials Science & Processing 81.7(2005):1431-1434.