Organic light-emitting diodes with n-type silicon anode

IMR OpenIR

	Organic light-emitting diodes with n-type silicon anode
	G. Z. Ran; Y. H. Xu; G. L. Ma; A. G. Xu; Y. P. Qiao; W. X. Chen; G. G. Qin
	2005
发表期刊	Semiconductor Science and Technology
ISSN	0268-1242
卷号	20 期号:8 页码:761-764
摘要	In an AIQ-based bilayer organic light-emitting diode, n-type silicon has been used as an anode, and semitransparent metals Sm (15 nm)/Au (15 nm) as a cathode. This device has much smaller currents at high voltages (> 8 V) and a higher turn-on voltage than the device with an identical structure but an indium-tin oxide anode. By successively depositing ultra thin films of Au and AIQ on the n-Si surface, the device performances are improved significantly, reaching a power efficiency of 0.1 Im W-1 and a current efficiency of 0.7 cd A(-1) at 15.9 V and 0.3 mA mm(-2). The mechanisms for the hole injection and performance improvement are discussed.
部门归属	peking univ, sch phys, state key lab mesoscop phys, beijing 100871, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china.;ran, gz (reprint author), peking univ, sch phys, state key lab mesoscop phys, beijing 100871, peoples r china;qingg@pku.edu.cn
关键词	Enhanced Hole Injection Indium Tin Oxide Raman Laser Devices Buffer
URL	查看原文
WOS记录号	WOS:000231674100023
引用统计	被引频次：9[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/35014
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	G. Z. Ran,Y. H. Xu,G. L. Ma,et al. Organic light-emitting diodes with n-type silicon anode[J]. Semiconductor Science and Technology,2005,20(8):761-764.
APA	G. Z. Ran.,Y. H. Xu.,G. L. Ma.,A. G. Xu.,Y. P. Qiao.,...&G. G. Qin.(2005).Organic light-emitting diodes with n-type silicon anode.Semiconductor Science and Technology,20(8),761-764.
MLA	G. Z. Ran,et al."Organic light-emitting diodes with n-type silicon anode".Semiconductor Science and Technology 20.8(2005):761-764.